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Bipolar Transistor Arrays, Pre-Biased

Compare the current Bipolar Transistor Arrays, Pre-Biased Bipolar (BJT) selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Resistor - Base (R1) Resistor - Emitter Base (R2) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) Frequency - Transition Power - Max Grade Qualification Mounting Type Supplier Device Package
RN1906FE(T5L,F,T) Toshiba Semiconductor and Storage

RN1906FE(T5L,F,T)

TRANS 2NPN PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

8,695 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Obsolete 2 NPN - Pre-Biased (Dual) 100mA 50V 4.7kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 100mW - - Surface Mount ES6
RN2902FE(T5L,F,T) Toshiba Semiconductor and Storage

RN2902FE(T5L,F,T)

TRANS 2PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

7,142 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Obsolete 2 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 10kOhms 50 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW - - Surface Mount ES6
RN2969FE(TE85L,F) Toshiba Semiconductor and Storage

RN2969FE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

7,625 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Obsolete 2 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW - - Surface Mount ES6
RN2971FE(TE85L,F) Toshiba Semiconductor and Storage

RN2971FE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

6,702 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Obsolete 2 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW - - Surface Mount ES6
RN4908(T5L,F,T) Toshiba Semiconductor and Storage

RN4908(T5L,F,T)

TRANS NPN/PNP PREBIAS 0.2W US6

Toshiba Semiconductor and Storage

8,632 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 22kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 200mW - - Surface Mount US6
RN4909(T5L,F,T) Toshiba Semiconductor and Storage

RN4909(T5L,F,T)

TRANS NPN/PNP PREBIAS 0.2W US6

Toshiba Semiconductor and Storage

5,057 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 200mW - - Surface Mount US6
RN2714,LF Toshiba Semiconductor and Storage

RN2714,LF

PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM

Toshiba Semiconductor and Storage

4,210 -
Datasheet - 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Obsolete 2 PNP - Pre-Biased (Dual) 100mA 50V 1kOhms 10kOhms 50 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA - 200mW - - Surface Mount USV
RN49A1FE(TE85L,F) Toshiba Semiconductor and Storage

RN49A1FE(TE85L,F)

PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

Toshiba Semiconductor and Storage

7,586 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Obsolete 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 2.2kOhms, 22kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz, 250MHz 100mW - - Surface Mount ES6
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Bipolar Transistor Arrays, Pre-Biased FAQ

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