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Single, Pre-Biased Bipolar Transistors

Compare the current Single, Pre-Biased Bipolar Transistors Bipolar (BJT) selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Resistor - Base (R1) Resistor - Emitter Base (R2) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) Frequency - Transition Power - Max Grade Qualification Mounting Type Supplier Device Package
RN1316,LXHF Toshiba Semiconductor and Storage

RN1316,LXHF

TRANS PREBIAS NPN 50V 0.1A SC70

Toshiba Semiconductor and Storage

6,000 -
Datasheet - SC-70, SOT-323 Tape & Reel (TR) Active NPN - Pre-Biased 100 mA 50 V 4.7 kOhms 10 kOhms 50 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250 MHz 100 mW Automotive AEC-Q101 Surface Mount SC-70
RN1304,LXHF Toshiba Semiconductor and Storage

RN1304,LXHF

TRANS PREBIAS NPN 50V 0.1A SC70

Toshiba Semiconductor and Storage

2,482 -
Datasheet - SC-70, SOT-323 Tape & Reel (TR) Active NPN - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250 MHz 100 mW Automotive AEC-Q101 Surface Mount SC-70
RN2423(TE85L,F) Toshiba Semiconductor and Storage

RN2423(TE85L,F)

TRANS PREBIAS PNP 50V SMINI

Toshiba Semiconductor and Storage

6,030 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active PNP - Pre-Biased 800 mA 50 V 4.7 kOhms 4.7 kOhms 70 @ 100mA, 1V 250mV @ 1mA, 50mA 500nA 200 MHz 200 mW - - Surface Mount S-Mini
RN2424(TE85L,F) Toshiba Semiconductor and Storage

RN2424(TE85L,F)

TRANS PREBIAS PNP 50V SMINI

Toshiba Semiconductor and Storage

4,772 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active PNP - Pre-Biased 800 mA 50 V 10 kOhms 10 kOhms 90 @ 100mA, 1V 250mV @ 1mA, 50mA 500nA 200 MHz 200 mW - - Surface Mount S-Mini
RN2426(TE85L,F) Toshiba Semiconductor and Storage

RN2426(TE85L,F)

TRANS PREBIAS PNP 50V 0.8A SMINI

Toshiba Semiconductor and Storage

7,394 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active PNP - Pre-Biased 800 mA 50 V 1 kOhms 10 kOhms 90 @ 100mA, 1V 250mV @ 1mA, 50mA 500nA 200 MHz 200 mW - - Surface Mount S-Mini
RN1117MFV,L3F Toshiba Semiconductor and Storage

RN1117MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM

Toshiba Semiconductor and Storage

8,000 -
Datasheet - SOT-723 Tape & Reel (TR) Active NPN - Pre-Biased 100 mA 50 V 10 kOhms 4.7 kOhms 30 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA 250 MHz 150 mW - - Surface Mount VESM
RN1118MFV,L3F Toshiba Semiconductor and Storage

RN1118MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM

Toshiba Semiconductor and Storage

7,990 -
Datasheet - SOT-723 Tape & Reel (TR) Active NPN - Pre-Biased 100 mA 50 V 47 kOhms 10 kOhms 50 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250 MHz 150 mW - - Surface Mount VESM
RN1119MFV,L3F Toshiba Semiconductor and Storage

RN1119MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM

Toshiba Semiconductor and Storage

7,970 -
Datasheet - SOT-723 Tape & Reel (TR) Active NPN - Pre-Biased 100 mA 50 V 1 kOhms - 120 @ 1mA, 5V 300mV @ 500µA, 5mA 100nA (ICBO) - 150 mW - - Surface Mount VESM
RN1132MFV,L3F Toshiba Semiconductor and Storage

RN1132MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM

Toshiba Semiconductor and Storage

7,950 -
Datasheet - SOT-723 Tape & Reel (TR) Active NPN - Pre-Biased 100 mA 50 V 200 kOhms - 120 @ 1mA, 5V 300mV @ 500µA, 5mA 100nA (ICBO) - 150 mW - - Surface Mount VESM
RN2109MFV,L3F Toshiba Semiconductor and Storage

RN2109MFV,L3F

TRANS PREBIAS PNP 50V 0.1A VESM

Toshiba Semiconductor and Storage

7,950 -
Datasheet - SOT-723 Tape & Reel (TR) Active PNP - Pre-Biased 100 mA 50 V 47 kOhms 22 kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA - 150 mW - - Surface Mount VESM
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Single, Pre-Biased Bipolar Transistors FAQ

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