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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GE12047BCA3 GE Aerospace

GE12047BCA3

MOSFET 2N-CH 1200V 475A

GE Aerospace

4,201 -
Datasheet SiC Power Module Box Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) - - Chassis Mount -
GE12047CCA3 GE Aerospace

GE12047CCA3

MOSFET 2N-CH 1200V 475A MODULE

GE Aerospace

3,881 -
Datasheet SiC Power Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) - - Chassis Mount Module
GE17042CCA3 GE Aerospace

GE17042CCA3

MOSFET 2N-CH 1700V 425A MODULE

GE Aerospace

2,364 -
Datasheet SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W 175°C (TJ) - - Chassis Mount Module
GE17042BCA3 GE Aerospace

GE17042BCA3

MOSFET 2N-CH 1700V 425A MODULE

GE Aerospace

3,416 -
Datasheet SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W 175°C (TJ) - - Chassis Mount Module
GE17045EEA3 GE Aerospace

GE17045EEA3

MOSFET 6N-CH 1700V 425A

GE Aerospace

6,428 -
Datasheet SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount -
GE12050EEA3 GE Aerospace

GE12050EEA3

MOSFET 6N-CH 1200V 475A MODULE

GE Aerospace

0 -
Datasheet SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 475A (Tc) 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount Module
GE17140CEA3 GE Aerospace

GE17140CEA3

MOSFET 2N-CH 1700V 1.275KA MODUL

GE Aerospace

3,899 -
Datasheet SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 1.275kA - 4.5V @ 480mA 3621nC @ 18V 82nF @ 600V 3.75kW -55°C ~ 150°C (Tc) - - Chassis Mount Module

FET, MOSFET Arrays FAQ

How can I narrow the current FET, MOSFET Arrays selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FET, MOSFET Arrays parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

Please provide the target part number, manufacturer, quantity and any required date code, package or delivery requirements so our team can respond more accurately.

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