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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FF33MR12W1M1HB11BPSA1 Infineon Technologies

FF33MR12W1M1HB11BPSA1

MOSFET

Infineon Technologies

23 -
Datasheet - - Tray Active - - - - - - - - - - - - - - -
DF14MR12W1M1HFB67BPSA1 Infineon Technologies

DF14MR12W1M1HFB67BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

24 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF11MR12W2M1HPB11BPSA1 Infineon Technologies

FF11MR12W2M1HPB11BPSA1

MOSFET 1200V

Infineon Technologies

18 -
Datasheet CoolSiC™ - Tray Active - - - 1200V (1.2kV) - - - - - - - - - - -
FF17MR12W1M1HPB11BPSA1 Infineon Technologies

FF17MR12W1M1HPB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

24 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
DF8MR12W1M1HFB67BPSA1 Infineon Technologies

DF8MR12W1M1HFB67BPSA1

MOSFET 2N-CH 1200V 45A AG-EASY1B

Infineon Technologies

22 -
Datasheet EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 45A 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB70BPSA1 Infineon Technologies

FF17MR12W1M1HB70BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

13 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB17BPSA1 Infineon Technologies

FF17MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V 50A AG-EASY1B

Infineon Technologies

24 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 50A (Tj) 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF8MR12W1M1HB70BPSA1 Infineon Technologies

FF8MR12W1M1HB70BPSA1

MOSFET

Infineon Technologies

20 -
Datasheet - - Tray Active - - - - - - - - - - - - - - -
FF7MR12W1M1HB17BPSA1 Infineon Technologies

FF7MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

24 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tj) 5.8mOhm @ 120A, 18V 5.15V @ 56mA 400nC @ 18V 12100pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF6MR12W2M1HPB11BPSA1 Infineon Technologies

FF6MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 200A MODULE

Infineon Technologies

18 -
Datasheet HEXFET® Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
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FET, MOSFET Arrays FAQ

How can I narrow the current FET, MOSFET Arrays selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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