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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF8915 Infineon Technologies

IRF8915

MOSFET 2N-CH 20V 8.9A 8SO

Infineon Technologies

4,173 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 8.9A 18.3mOhm @ 8.9A, 10V 2.5V @ 250µA 7.4nC @ 4.5V 540pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFH7911TR2PBF Infineon Technologies

IRFH7911TR2PBF

MOSFET 2N-CH 30V 13A/28A PQFN

Infineon Technologies

2,785 -
Datasheet - 18-PowerVQFN Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 13A, 28A 8.6mOhm @ 12A, 10V 2.35V @ 25µA 12nC @ 4.5V 1060pF @ 15V 2.4W, 3.4W - - - Surface Mount PQFN (5x6)
IRF7530TR Infineon Technologies

IRF7530TR

MOSFET 2N-CH 20V 5.4A MICRO8

Infineon Technologies

6,036 -
Datasheet HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 5.4A 30mOhm @ 5.4A, 4.5V 1.2V @ 250µA 26nC @ 4.5V 1310pF @ 15V 1.3W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
IRF7509TR Infineon Technologies

IRF7509TR

MOSFET N/P-CH 30V 2.7A/2A MICRO8

Infineon Technologies

4,361 -
Datasheet HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 2.7A, 2A 110mOhm @ 1.4A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
IRF7501TR Infineon Technologies

IRF7501TR

MOSFET 2N-CH 20V 2.4A MICRO8

Infineon Technologies

3,307 -
Datasheet - 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 2.4A 135mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V 260pF @ 15V 1.25W - - - Surface Mount Micro8™
IRF7507TR Infineon Technologies

IRF7507TR

MOSFET N/P-CH 20V 2.4A MICRO8

Infineon Technologies

5,475 -
Datasheet - 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 2.4A, 1.7A 140mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V 260pF @ 15V 1.25W - - - Surface Mount Micro8™
IRF7503TR Infineon Technologies

IRF7503TR

MOSFET 2N-CH 30V 2.4A MICRO8

Infineon Technologies

7,454 -
Datasheet - 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 2.4A 135mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V 1.25W - - - Surface Mount Micro8™
F445MR12W1M1B76BPSA1 Infineon Technologies

F445MR12W1M1B76BPSA1

MOSFET 4N-CH 1200V 25A AG-EASY1B

Infineon Technologies

9,244 -
Datasheet EasyPACK™ CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
DF23MR12W1M1B11BOMA1 Infineon Technologies

DF23MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

7,900 -
Datasheet - Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A 45mOhm @ 25A, 15V 5.5V @ 10mA 620nC @ 15V 2000pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
F423MR12W1M1B76BPSA1 Infineon Technologies

F423MR12W1M1B76BPSA1

MOSFET 4N-CH 1200V 45A AG-EASY1B

Infineon Technologies

8,739 -
Datasheet EasyPACK™ CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 45A (Tj) 22.5mOhm @ 50A, 15V 5.55V @ 20mA 124nC @ 15V 3680pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
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FET, MOSFET Arrays FAQ

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