FET, MOSFET Arrays
Browse available FET, MOSFET Arrays components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMT47M2LDVQ-13MOSFET 2N-CH 40V 11.9A PWRDI3333 |
30 | - |
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Datasheet | - | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 11.9A (Ta), 30.2A (Tc) | 10.8mOhm @ 20A, 10V | 2.3V @ 250µA | 14nC @ 10V | 891pF @ 20V | 2.34W (Ta), 14.8W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerDI3333-8 (Type UXC) |
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CSD85301Q2TMOSFET 2N-CH 20V 5A 6WSON |
1,024 | - |
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Datasheet | NexFET™ | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 5V Drive | 20V | 5A | 27mOhm @ 5A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 469pF @ 10V | 2.3W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WSON (2x2) |
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SQJQ904E-T1_GE3MOSFET 2N-CH 40V 100A PPAK8X8 |
79 | - |
|
Datasheet | TrenchFET® | PowerPAK® 8 x 8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 100A (Tc) | 3.4mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | 5900pF @ 20V | 75W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 8 x 8 Dual |
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ALD1115PALMOSFET N/P-CH 10.6V 8PDIP |
50 | - |
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Datasheet | - | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | N and P-Channel Complementary | - | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD1103PBLMOSFET 2N/2P-CH 10.6V 14PDIP |
37 | - |
|
Datasheet | - | 14-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N and 2 P-Channel Matched Pair | - | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 14-PDIP |
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NVXK2VR40WXT2MOSFET 6N-CH 1200V 55A APM32 |
14 | - |
|
Datasheet | - | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 59mOhm @ 35A, 20V | 4.3V @ 10mA | 106nC @ 20V | 1789pF @ 800V | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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FF17MR12W1M1HB11BPSA1MOSFET 1200V AG-EASY1B |
13 | - |
|
Datasheet | CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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FS33MR12W1M1HB11BPSA1MOSFET 1200V AG-EASY1B |
3 | - |
|
Datasheet | CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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FF8MR12W1M1HS4PB11BPSA1MOSFET 2N-CH 1200V AG-EASY1B |
4 | - |
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Datasheet | CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 100A (Tj) | 8.1mOhm @ 100A, 18V | 5.15V @ 40mA | 297nC @ 18V | 8800pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
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F3L8MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V 85A AG-EASY2B |
24 | - |
|
Datasheet | EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 85A (Tj) | 12mOhm @ 100A, 18V | 5.15V @ 40mA | 297nC @ 18V | 8800pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY2B |
|
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CBB032M12FM3TMOSFET 4N-CH 1200V 39A |
22 | - |
|
Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 39A (Tj) | 44mOhm @ 30A, 15V | 3.9V @ 11mA | 118nC @ 15V | 3500pF @ 1000V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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FS13MR12W2M1HB70BPSA1MOSFET 6N-CH 1200V 62.5A |
15 | - |
|
Datasheet | CoolSiC™ | - | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 62.5A (Tc) | 11.7mOhm @ 62.5A, 18V | 5.15V @ 28mA | 200nC @ 18V | 6050pF @ 800V | - | - | - | - | - | - |
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FF6MR12KM1HHPSA1MOSFET |
10 | - |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CAB006A12GM3MOSFET 2N-CH 1200V 200A |
10 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 200A (Tj) | 6.9mOhm @ 200A, 15V | 3.6V @ 69mA | 708nC @ 15V | 20400pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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MSCSM170HM23CT3AGMOSFET 4N-CH 1700V 124A |
2 | - |
|
Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | 602W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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BSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE |
11 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 300A (Tc) | - | 4V @ 68mA | - | 35000pF @ 10V | 1875W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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NVVR26A120M1WSBMOSFET 2N-CH 1200V AHPM15-CDE |
10 | - |
|
Datasheet | - | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDE |
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NVVR26A120M1WSSMOSFET 2N-CH 1200V AHPM15-CDI |
9 | - |
|
Datasheet | - | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDI |
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CAB530M12BM3MOSFET 2N-CH 1200V 530A MODULE |
4 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 530A | 3.55mOhm @ 530A, 15V | 3.6V @ 140mA | 1362nC @ 4V | 39600pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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WAB400M12BM3MOSFET 2N-CH 1200V 468A MODULE |
21 | - |
|
Datasheet | - | Module | Bulk | Last Time Buy | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 468A (Tc) | 4.25mOhm @ 400A, 15V | 3.6V @ 106mA | 1040nC @ 15V | 29700pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
FET, MOSFET Arrays FAQ
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