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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NXH040P120MNF1PG onsemi

NXH040P120MNF1PG

MOSFET 2N-CH 1200V 30A

onsemi

28 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH008P120M3F1PTG onsemi

NXH008P120M3F1PTG

MOSFET 2N-CH 1200V 145A

onsemi

27 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P120MNF1PTNG onsemi

NXH010P120MNF1PTNG

MOSFET 2N-CH 1200V 114A

onsemi

28 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH020F120MNF1PG onsemi

NXH020F120MNF1PG

MOSFET 4N-CH 1200V 51A 22PIM

onsemi

28 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
NXH004P120M3F2PTNG onsemi

NXH004P120M3F2PTNG

MOSFET 2N-CH 1200V 338A 36PIM

onsemi

40 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 338A (Tj) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.1kW (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
NTK3142PT1H-ON onsemi

NTK3142PT1H-ON

MOSFET P-CH

onsemi

100,800 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - -
EFC4601-M-TR-ON onsemi

EFC4601-M-TR-ON

MOSFET N-CH

onsemi

1,895,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - -
SCH2822-TL-E onsemi

SCH2822-TL-E

PCH+SBD 2.5V DRIVE SERIES

onsemi

170,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - -
2SB808F-SPA-ON onsemi

2SB808F-SPA-ON

MOSFET N-CH

onsemi

35,003 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - -
FDS6900AS-G onsemi

FDS6900AS-G

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

onsemi

3,346 -
Datasheet PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.9A, 8.2A 27mOhm @ 6.9A, 10V 3V @ 250µA, 3V @ 1mA 15nC @ 10V 600pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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FET, MOSFET Arrays FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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