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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NVMFWD010N10MCLT1G onsemi

NVMFWD010N10MCLT1G

MOSFET 2N-CH 100V 11.6A 8DFN

onsemi

9,000 -
Datasheet - 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 11.6A (Ta), 61A (Tc) 10.4mOhm @ 17A, 10V 3V @ 97µA 26nC @ 10V 1800pF @ 50V 3.1W (Ta), 84W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-DFN (5x6) Dual Flag (SO8FL-Dual)
FDMS1D2N03DSD onsemi

FDMS1D2N03DSD

MOSFET

onsemi

52,964 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - -
NVMFD040N10MCLT1G onsemi

NVMFD040N10MCLT1G

MOSFET 2N-CH 100V 6.1A 8DFN

onsemi

6,000 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.1A (Ta), 21A (Tc) 39mOhm @ 5A, 10V 3V @ 26µA 8.4nC @ 10V 520pF @ 50V 3.2W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NXH020U90MNF2PTG onsemi

NXH020U90MNF2PTG

MOSFET 2N-CH 900V 149A

onsemi

4 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 900V 149A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 352W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NVXK2VR40WXT2 onsemi

NVXK2VR40WXT2

MOSFET 6N-CH 1200V 55A APM32

onsemi

14 -
Datasheet - 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVVR26A120M1WSB onsemi

NVVR26A120M1WSB

MOSFET 2N-CH 1200V AHPM15-CDE

onsemi

10 -
Datasheet - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDE
NVVR26A120M1WSS onsemi

NVVR26A120M1WSS

MOSFET 2N-CH 1200V AHPM15-CDI

onsemi

9 -
Datasheet - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDI
FAM65CR51DZ1 onsemi

FAM65CR51DZ1

MOSFET 2N-CH 650V 33A APMCD-B16

onsemi

67 -
Datasheet - 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel - 650V 33A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 160W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
NXH015P120M3F1PTG onsemi

NXH015P120M3F1PTG

MOSFET 2N-CH 1200V 77A

onsemi

13 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 77A (Tc) 20mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH008P120M3F1PG onsemi

NXH008P120M3F1PG

MOSFET 2N-CH 1200V 145A

onsemi

18 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
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FET, MOSFET Arrays FAQ

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