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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSM120D12P2C005 Rohm Semiconductor

BSM120D12P2C005

MOSFET 2N-CH 1200V 120A MODULE

Rohm Semiconductor

7 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 120A (Tc) - 2.7V @ 22mA - 14000pF @ 10V 780W -40°C ~ 150°C (TJ) - - - Module
BSM180D12P2E002 Rohm Semiconductor

BSM180D12P2E002

MOSFET 2N-CH 1200V 204A MODULE

Rohm Semiconductor

8 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 18000pF @ 10V 1360W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
BSM600D12P3G001 Rohm Semiconductor

BSM600D12P3G001

MOSFET 2N-CH 1200V 600A MODULE

Rohm Semiconductor

7 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 600A (Tc) - 5.6V @ 182mA - 31000pF @ 10V 2450W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
BSM180D12P3C007 Rohm Semiconductor

BSM180D12P3C007

MOSFET 2N-CH 1200V 180A MODULE

Rohm Semiconductor

13 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 180A (Tc) - 5.6V @ 50mA - 900pF @ 10V 880W 175°C (TJ) - - Surface Mount Module
BSM400D12P3G002 Rohm Semiconductor

BSM400D12P3G002

MOSFET 2N-CH 1200V 400A MODULE

Rohm Semiconductor

2 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tc) - 5.6V @ 109.2mA - 17000pF @ 10V 1570W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
BSM300D12P3E005 Rohm Semiconductor

BSM300D12P3E005

MOSFET 2N-CH 1200V 300A MODULE

Rohm Semiconductor

6 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 300A (Tc) - 5.6V @ 91mA - 14000pF @ 10V 1260W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
BSM400D12P2G003 Rohm Semiconductor

BSM400D12P2G003

MOSFET 2N-CH 1200V 400A MODULE

Rohm Semiconductor

4 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tc) - 4V @ 85mA - 38000pF @ 10V 2450W (Tc) -40°C ~ 150°C (TJ) - - - Module
BSM450D12P4G102 Rohm Semiconductor

BSM450D12P4G102

MOSFET 2N-CH 1200V 447A MODULE

Rohm Semiconductor

4 -
Datasheet - Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 447A (Tc) - 4.8V @ 218.4mA - 44000pF @ 10V 1.45kW (Tc) 175°C (TJ) - - Chassis Mount Module
EM5K5T2R Rohm Semiconductor

EM5K5T2R

MOSFET 2N-CH 30V 0.3A EMT5

Rohm Semiconductor

42 -
Datasheet - 6-SMD (5 Leads), Flat Leads Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 300mA 600mOhm @ 300mA, 4.5V - - - 150mW - - - Surface Mount EMT5
SH8M2TB1 Rohm Semiconductor

SH8M2TB1

MOSFET N/P-CH 30V 3.5A 8SOP

Rohm Semiconductor

171 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel - 30V 3.5A 83mOhm @ 3.5A, 10V 2.5V @ 1mA 3.5nC @ 5V 140pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
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FET, MOSFET Arrays FAQ

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