FET, MOSFET Arrays
Browse available FET, MOSFET Arrays components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDMD8260LET60MOSFET 2N-CH 60V 15A 12POWER |
7,272 | - |
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Datasheet | PowerTrench® | 12-PowerWDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 15A | 5.8mOhm @ 15A, 10V | 3V @ 250µA | 68nC @ 10V | 5245pF @ 30V | 1.1W | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 12-Power3.3x5 |
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ALD212908APALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
7,109 | - |
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Datasheet | EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD310704PCLMOSFET 4P-CH 8V 16PDIP |
3,728 | - |
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Datasheet | EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
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ALD310708PCLMOSFET 4P-CH 8V 16PDIP |
3,316 | - |
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Datasheet | EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
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ALD1101BPALMOSFET 2N-CH 10.6V 8PDIP |
3,396 | - |
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Datasheet | - | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD1102BPALMOSFET 2P-CH 10.6V 8PDIP |
5,033 | - |
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Datasheet | - | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD110808ASCLMOSFET 4N-CH 10.6V 16SOIC |
4,979 | - |
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Datasheet | EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
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ALD114804APCLMOSFET 4N-CH 10.6V 16PDIP |
7,794 | - |
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Datasheet | EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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IRF7530TRMOSFET 2N-CH 20V 5.4A MICRO8 |
6,036 | - |
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Datasheet | HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 20V | 5.4A | 30mOhm @ 5.4A, 4.5V | 1.2V @ 250µA | 26nC @ 4.5V | 1310pF @ 15V | 1.3W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
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SD5000N PDIP 16L ROHSMOSFET 4N-CH 20V 0.05A 16DIP |
4,796 | - |
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Datasheet | - | 16-DIP (0.300", 7.62mm) | Obsolete | MOSFET (Metal Oxide) | 4 N-Channel | - | 20V | 50mA (Ta) | 70Ohm @ 1mA, 5V | 1.5V @ 1µA | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 16-DIP | |
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SMA5118MOSFET 6N-CH 500V 5A 12SIP |
8 | - |
|
Datasheet | - | 12-SIP | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 500V | 5A | 1.4Ohm @ 2.5A, 10V | 4V @ 1mA | - | 770pF @ 10V | 4W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
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SMA5112MOSFET 6N-CH 250V 7A 12SIP |
3,873 | - |
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Datasheet | - | 12-SIP | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 250V | 7A | 500mOhm @ 3.5A, 10V | 4V @ 1mA | - | 450pF @ 10V | 4W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
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ALD110808APCLMOSFET 4N-CH 10.6V 16PDIP |
2,978 | - |
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Datasheet | EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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SLA5037MOSFET 4N-CH 100V 10A 12SIP |
9,271 | - |
|
Datasheet | - | 12-SIP Exposed Tab | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel | Logic Level Gate | 100V | 10A | 80mOhm @ 5A, 10V | 2V @ 250mA | - | 1630pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
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ALD310702APCLMOSFET 4P-CH 8V 16PDIP |
3,420 | - |
|
Datasheet | EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
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ALD310704APCLMOSFET 4P-CH 8V 16PDIP |
3,289 | - |
|
Datasheet | EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
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ALD310708APCLMOSFET 4P-CH 8V 16PDIP |
4,185 | - |
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Datasheet | EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
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SLA5041MOSFET 4N-CH 200V 10A 12SIP |
9,059 | - |
|
Datasheet | - | 12-SIP Exposed Tab | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel | Logic Level Gate | 200V | 10A | 175mOhm @ 5A, 10V | 4V @ 1mA | - | 850pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
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EPC2100ENGRTMOSFET 2N-CH 30V 10A DIE |
6,740 | - |
|
Datasheet | eGaN® | Die | Tape & Reel (TR) | Obsolete | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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ALD1101APALMOSFET 2N-CH 10.6V 8PDIP |
4,524 | - |
|
Datasheet | - | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
FET, MOSFET Arrays FAQ
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