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FET, MOSFET Arrays

Browse available FET, MOSFET Arrays components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MSCSM120HM16CTBL3NG Microchip Technology

MSCSM120HM16CTBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

2,113 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
PJT7808_R2_00001 EMO Inc.

PJT7808_R2_00001

MOSFET 2N-CH 20V 0.5A SOT363

EMO Inc.

7,006 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 500mA (Ta) 400mOhm @ 500mA, 4.5V 900mV @ 250µA 1.4nC @ 4.5V 67pF @ 10V 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
FF1MR12KM1HP Infineon Technologies

FF1MR12KM1HP

MOSFET

Infineon Technologies

2,689 -
Datasheet - - Tray Active - - - - - - - - - - - - - - -
GE17045EEA3 GE Aerospace

GE17045EEA3

MOSFET 6N-CH 1700V 425A

GE Aerospace

6,428 -
Datasheet SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount -
MSCSM120HM16TBL3NG Microchip Technology

MSCSM120HM16TBL3NG

MOSFET 6N-CH 1200V 150A

Microchip Technology

6,075 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM16TBL3NG Microchip Technology

MSCSM120DDUM16TBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

9,089 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
DMN5L06VKQ-13 Diodes Incorporated

DMN5L06VKQ-13

MOSFET 2N-CH 50V 0.28A SOT563

Diodes Incorporated

9,220 -
Datasheet - SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 280mA (Ta) 2Ohm @ 50mA, 5V 1V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
IRF8910TRPBF-1 Infineon Technologies

IRF8910TRPBF-1

MOSFET 2N-CH 20V 10A 8SO

Infineon Technologies

8,835 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 10A (Ta) 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 960pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IPG20N06S2L65AAUMA1 Infineon Technologies

IPG20N06S2L65AAUMA1

MOSFET 2N-CH 55V 20A 8TDSON

Infineon Technologies

6,516 -
Datasheet OptiMOS™ 8-PowerVDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 20A (Tc) 65mOhm @ 15A, 10V 2V @ 14µA 12nC @ 10V 410pF @ 25V 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PG-TDSON-8-10
NTMFD0D9N02P1E onsemi

NTMFD0D9N02P1E

MOSFET 2N-CH 30V/25V 14A 8PQFN

onsemi

4,074 -
Datasheet - 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V, 25V 14A (Ta), 30A (Ta) 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V 2V @ 340µA, 2V @ 1mA 9nC, 30nC @ 4.5V 1400pF @ 15V, 5050pF @ 13V 960mW (Ta), 1.04W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
GE12050EEA3 GE Aerospace

GE12050EEA3

MOSFET 6N-CH 1200V 475A MODULE

GE Aerospace

0 -
Datasheet SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 475A (Tc) 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount Module
GE17140CEA3 GE Aerospace

GE17140CEA3

MOSFET 2N-CH 1700V 1.275KA MODUL

GE Aerospace

3,899 -
Datasheet SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 1.275kA - 4.5V @ 480mA 3621nC @ 18V 82nF @ 600V 3.75kW -55°C ~ 150°C (Tc) - - Chassis Mount Module
UM6K1N-TP Micro Commercial Co

UM6K1N-TP

MOSFET 2N-CH 30V 0.1A SOT363

Micro Commercial Co

5,022 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 100mA 8Ohm @ 10mA, 4V 1.5V @ 100µA - 13pF @ 5V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
2N7002DWL-TP Micro Commercial Co

2N7002DWL-TP

MOSFET 2N-CH 60V 0.115A SOT23-6L

Micro Commercial Co

3,413 -
Datasheet - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 115mA 4.5Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 225mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
SIL6321-TP Micro Commercial Co

SIL6321-TP

MOSFET N/P-CH 30V 1A SOT23-6L

Micro Commercial Co

8,001 -
Datasheet - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 1A 320mOhm @ 1A, 10V 1.4V @ 250µA, 1.3V @ 250µA - 1155pF @ 15V, 1050pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
SI3139KDW-TP Micro Commercial Co

SI3139KDW-TP

MOSFET 2P-CH 20V 0.66A SOT363

Micro Commercial Co

3,768 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 660mA 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 175pF @ 16V 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
SIL3439K-TP Micro Commercial Co

SIL3439K-TP

MOSFET N/P-CH 20V 1.3A SOT23-6L

Micro Commercial Co

8,835 -
Datasheet - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.3A, 1.1A 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 60pF @ 16V, 175pF @ 16V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
TPC8228-H,LQ Toshiba Semiconductor and Storage

TPC8228-H,LQ

MOSFET 2N-CH 60V 3.8A 8SOP

Toshiba Semiconductor and Storage

6,873 -
Datasheet U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3.8A 57mOhm @ 1.9A, 10V 2.3V @ 100µA 11nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
TPC8227-H,LQ Toshiba Semiconductor and Storage

TPC8227-H,LQ

MOSFET 2N-CH 40V 5.1A 8SOP

Toshiba Semiconductor and Storage

5,861 -
Datasheet U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 5.1A 33mOhm @ 2.6A, 10V 2.3V @ 100µA 10nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
IPG20N06S2L65AUMA1 Infineon Technologies

IPG20N06S2L65AUMA1

MOSFET

Infineon Technologies

6,688 -
Datasheet - - Bulk Obsolete - - - - - - - - - - - - - - -
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FET, MOSFET Arrays FAQ

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