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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SSM6N35AFE,LF Toshiba Semiconductor and Storage

SSM6N35AFE,LF

MOSFET 2N-CH 20V 0.25A ES6

Toshiba Semiconductor and Storage

63,479 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 250mA (Ta) 1.1Ohm @ 150mA, 4.5V 1V @ 100µA 0.34nC @ 4.5V 36pF @ 10V 250mW 150°C - - Surface Mount ES6
SSM6P35AFE,LF Toshiba Semiconductor and Storage

SSM6P35AFE,LF

MOSFET 2P-CH 20V 0.25A ES6

Toshiba Semiconductor and Storage

6,009 -
Datasheet U-MOSVII SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 250mA (Ta) 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - 42pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
SSM6N44FE,LM Toshiba Semiconductor and Storage

SSM6N44FE,LM

MOSFET 2N-CH 30V 0.1A ES6

Toshiba Semiconductor and Storage

135,240 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 100mA 4Ohm @ 10mA, 4V 1.5V @ 100µA - 8.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6L36FE,LM Toshiba Semiconductor and Storage

SSM6L36FE,LM

MOSFET N/P-CH 20V 0.5A ES6

Toshiba Semiconductor and Storage

39,399 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 500mA, 330mA 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6N43FU,LF Toshiba Semiconductor and Storage

SSM6N43FU,LF

MOSFET 2N-CH 20V 0.5A US6

Toshiba Semiconductor and Storage

8,860 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 500mA 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 200mW 150°C (TJ) - - Surface Mount US6
SSM6N56FE,LM Toshiba Semiconductor and Storage

SSM6N56FE,LM

MOSFET 2N-CH 20V 0.8A ES6

Toshiba Semiconductor and Storage

34,922 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 800mA 235mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 4.5V 55pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6N17FU(TE85L,F) Toshiba Semiconductor and Storage

SSM6N17FU(TE85L,F)

MOSFET 2N-CH 50V 0.1A US6

Toshiba Semiconductor and Storage

1,027 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 100mA (Ta) 20Ohm @ 10mA, 4V 1.5V @ 1µA - 7pF @ 3V 200mW (Ta) 150°C - - Surface Mount US6
SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage

SSM6L35FU(TE85L,F)

MOSFET N/P-CH 20V 0.18A US6

Toshiba Semiconductor and Storage

2,876 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.2V Drive 20V 180mA, 100mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 200mW -55°C ~ 150°C (TJ) - - Surface Mount US6
SSM6P15FE(TE85L,F) Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

MOSFET 2P-CH 30V 0.1A ES6

Toshiba Semiconductor and Storage

14,890 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 100mA 12Ohm @ 10mA, 4V 1.7V @ 100µA - 9.1pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6N40TU,LF Toshiba Semiconductor and Storage

SSM6N40TU,LF

MOSFET 2N-CH 30V 1.6A UF6

Toshiba Semiconductor and Storage

7,754 -
Datasheet - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 30V 1.6A (Ta) 122mOhm @ 1A, 10V 2.6V @ 1mA 5.1nC @ 10V 180pF @ 15V 500mW (Ta) 150°C - - Surface Mount UF6
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