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FET, MOSFET Arrays

Browse available FET, MOSFET Arrays components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
CSD88584Q5DCT Texas Instruments

CSD88584Q5DCT

MOSFET 2N-CH 40V 22VSON-CLIP

Texas Instruments

2,567 -
Datasheet NexFET™ 22-PowerTFDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V - 0.95mOhm @ 30A, 10V 2.3V @ 250µA 88nC @ 4.5V 12400pF @ 20V 12W -55°C ~ 150°C (TJ) - - Surface Mount 22-VSON-CLIP (5x6)
NVMFD5C446NLWFT1G onsemi

NVMFD5C446NLWFT1G

MOSFET 2N-CH 40V 25A 8DFN

onsemi

785 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 25A (Ta), 145A (Tc) 2.65mOhm @ 20A, 10V 2.2V @ 90µA 25nC @ 4.5V 3170pF @ 25V 3.5W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
ISG0616N10NM5HSCATMA1 Infineon Technologies

ISG0616N10NM5HSCATMA1

MOSFET 2N-CH 100V 19A 10WHITFN

Infineon Technologies

2,464 -
Datasheet OptiMOS™ 5 10-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 100V 19A (Ta), 139A (Tc) 4mOhm @ 50A, 10V 3.8V @ 85µA 78nC @ 10V 4800pF @ 50V 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHITFN-10-1
ALD111933SAL Advanced Linear Devices Inc.

ALD111933SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

909 -
Datasheet EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD1105PBL Advanced Linear Devices Inc.

ALD1105PBL

MOSFET 2N/2P-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

269 -
Datasheet - 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
ALD1107PBL Advanced Linear Devices Inc.

ALD1107PBL

MOSFET 4P-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

223 -
Datasheet - 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
EPC2104 EPC

EPC2104

MOSFET 2N-CH 100V 23A DIE

EPC

3,154 -
Datasheet eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 23A 6.3mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount Die
NXH011T120M3F2PTHG onsemi

NXH011T120M3F2PTHG

MOSFET 4N-CH 1200V 91A 29PIM

onsemi

28 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Solar Inverter) - 1200V (1.2kV) 91A (Tc) 16mOhm @ 70A, 18V 4.4V @ 40mA 306nC @ 20V 6331pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
FF8MR12W1M1HB11BPSA1 Infineon Technologies

FF8MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

34 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
NXH004P120M3F2PTHG onsemi

NXH004P120M3F2PTHG

MOSFET 2N-CH 1200V 284A 36PIM

onsemi

23 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 284A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 785W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
CAB008M12GM3 Wolfspeed, Inc.

CAB008M12GM3

SIC 2N-CH 1200V

Wolfspeed, Inc.

13 -
Datasheet WolfPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) - 10.4mOhm @ 150A, 15V 3.6V @ 46mA 472nC @ 15V 13600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
EPC7018DC EPC Space, LLC

EPC7018DC

MOSFET 2N-CH 100V 70A 4SMD

EPC Space, LLC

32 -
Datasheet eGaN® 4-SMD, No Lead Bulk Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 70A (Tc) 6.5mOhm @ 70A, 5V 2.5V @ 5mA 17nC @ 5V 1700pF @ 50V - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
BSS138AKDW-TP Micro Commercial Co

BSS138AKDW-TP

MOSFET 2N-CH 50V 0.22A SOT363

Micro Commercial Co

9,857 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 220mA 3Ohm @ 500mA, 10V 1.45V @ 250µA - 22800pF @ 25V 350mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
UM6X1NA-TP Micro Commercial Co

UM6X1NA-TP

MOSFET 2N-CH 30V 0.5A SOT563

Micro Commercial Co

4,780 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 500mA 750mOhm @ 300mA, 10V 1.5V @ 250µA 1.28nC @ 10V 28pF @ 15V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
DMC2991UDJ-7B Diodes Incorporated

DMC2991UDJ-7B

MOSFET N/P-CH 20V 0.5A SOT963

Diodes Incorporated

6,770 -
Datasheet - SOT-963 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 500mA (Ta), 360mA (Ta) 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V 1V @ 250µA 0.35nC @ 4.5V, 0.3nC @ 4.5V 21.5pF @ 15V, 17pF @ 16V 380mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-963
DMN63D8LDWQ-7 Diodes Incorporated

DMN63D8LDWQ-7

MOSFET 2N-CH 30V 0.22A SOT363

Diodes Incorporated

6,003 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 220mA 2.8Ohm @ 250mA, 10V 1.5V @ 250µA 0.87nC @ 10V 22pF @ 25V 300mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-363
SSM6N44FU,LF Toshiba Semiconductor and Storage

SSM6N44FU,LF

MOSFET 2N-CH 30V 0.1A US6

Toshiba Semiconductor and Storage

14,091 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 100mA (Ta) 4Ohm @ 10mA, 4V 1.5V @ 100µA - 8.5pF @ 3V 200mW (Ta) 150°C - - Surface Mount US6
SSM6N16FE,L3F Toshiba Semiconductor and Storage

SSM6N16FE,L3F

MOSFET 2N-CH 20V 0.1A ES6

Toshiba Semiconductor and Storage

7,626 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 100mA (Ta) 3Ohm @ 10mA, 4V 1.1V @ 100µA - 9.3pF @ 3V 150mW (Ta) 150°C - - Surface Mount ES6
DMN33D8LDW-7 Diodes Incorporated

DMN33D8LDW-7

MOSFET 2N-CH 30V 0.25A SOT363

Diodes Incorporated

18,995 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 250mA 2.4Ohm @ 250mA, 10V 1.5V @ 100µA 1.23nC @ 10V 48pF @ 5V 350mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
SSM6L35FE,LM Toshiba Semiconductor and Storage

SSM6L35FE,LM

MOSFET N/P-CH 20V 0.18A ES6

Toshiba Semiconductor and Storage

18,559 -
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 180mA, 100mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
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