FET, MOSFET Arrays

Browse available FET, MOSFET Arrays components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
ISG0614N06NM5HSCATMA1 MOSFET 2N-CH 60V 31A 10WHITFN Infineon Technologies	2,990	-	RFQ	Datasheet	OptiMOS™ 5	10-PowerWDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	60V	31A (Ta), 233A (Tc)	1.6mOhm @ 50A, 10V	3.3V @ 86µA	102nC @ 10V	6400pF @ 30V	3W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHITFN-10-1
IAUTN08S5N012LATMA1 MOSFET 2N-CH 80V 300A PG-HSOF Infineon Technologies	1,956	-	RFQ	Datasheet	OptiMOS™ 5	8-PowerSFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel, Common Drain, Common Source	-	80V	300A (Tj)	1.15mOhm @ 100A, 10V	3.3V @ 275µA	24nC @ 10V	15340pF @ 40V	375W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HSOF-8-2
WI62195 MOSFET 2N-CH 750V 9A 14PQFN Wise-Integration	1,477	-	RFQ	Datasheet	WiseGan™	14-PowerLDFN	Tray	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	750V	9A (Tj)	250mOhm @ 2A, 6V	1.75V @ 10mA	1.9nC @ 6V	53.5pF @ 400V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	14-PQFN (6x8)
NXV08A170DB2 MOSFET 2N-CH 80V 200A APM12-CBA onsemi	238	-	RFQ	Datasheet	-	12-PowerDIP Module (1.118", 28.40mm)	Tray	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	80V	200A (Tj)	0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V	4V @ 250µA	195nC @ 10V	14000pF @ 40V	-	175°C (TJ)	Automotive	AEC-Q100	Through Hole	APM12-CBA
NVXK2TR40WXT MOSFET 4N-CH 1200V 27A APM32 onsemi	60	-	RFQ	Datasheet	-	32-PowerDIP Module (1.311", 33.30mm)	Tube	Active	Silicon Carbide (SiC)	4 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	27A (Tc)	59mOhm @ 35A, 20V	4.3V @ 10mA	106nC @ 20V	1789pF @ 800V	319W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	APM32
F435MR07W1D7S8B11ABPSA1 MOSFET 4N-CH 650V 35A MODULE Infineon Technologies	42	-	RFQ	Datasheet	EasyPACK™ 1B	Module	Tray	Active	MOSFET (Metal Oxide)	4 N-Channel (Full Bridge)	-	650V	35A	39.4mOhm @ 35A, 10V	4.45V @ 1.74mA	141nC @ 10V	6950pF @ 400V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
NXH030F120M3F1PTG MOSFET 4N-CH 1200V 38A 22PIM onsemi	26	-	RFQ	Datasheet	-	Module	Tray	Active	SiCFET (Silicon Carbide)	4 N-Channel (Full Bridge)	Depletion Mode	1200V (1.2kV)	38A (Tc)	38.5mOhm @ 30A, 18V	4.4V @ 15mA	110nC @ 18V	2246pF @ 800V	100W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	22-PIM (33.8x42.5)
NXH010P120M3F1PG MOSFET 2N-CH 1200V 105A onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	105A (Tc)	14.5mOhm @ 90A, 18V	4.4V @ 45mA	314nC @ 18V	6451pF @ 800V	272W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH010P120M3F1PTG MOSFET 2N-CH 1200V 105A onsemi	27	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	105A (Tc)	14.5mOhm @ 90A, 18V	4.4V @ 45mA	314nC @ 18V	6451pF @ 800V	272W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
FF33MR12W1M1HPB11BPSA1 MOSFET Infineon Technologies	30	-	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DF11MR12W1M1HFB67BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	38	-	RFQ	Datasheet	CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	AG-EASY1B
NXH030P120M3F1PTG MOSFET 2N-CH 1200V 42A onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	42A (Tc)	38.5mOhm @ 30A, 18V	4.4V @ 15mA	110nC @ 18V	2271pF @ 800V	100W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH040P120MNF1PG MOSFET 2N-CH 1200V 30A onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	1200V (1.2kV)	30A (Tc)	56mOhm @ 25A, 20V	4.3V @ 10mA	122.1nC @ 20V	1505pF @ 800V	74W	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
NXH008P120M3F1PTG MOSFET 2N-CH 1200V 145A onsemi	27	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	145A (Tc)	10.9mOhm @ 120A, 18V	4.4V @ 60mA	419nC @ 18V	8334pF @ 800V	382W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
GCMX010A120B2B1P MOSFET 2N-CH 1200V 214A SemiQ	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	214A (Tc)	12mOhm @ 100A, 20V	4V @ 40mA	476nC @ 20V	13100pF @ 800V	750W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH010P120MNF1PTNG MOSFET 2N-CH 1200V 114A onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	4707pF @ 800V	250W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
CAB016M12FM3T MOSFET 2N-CH 1200V 78A MODULE Wolfspeed, Inc.	30	-	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	78A (Tj)	21.3mOhm @ 80A, 15V	3.6V @ 23mA	236nC @ 15V	6600pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
NXH020F120MNF1PG MOSFET 4N-CH 1200V 51A 22PIM onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	2420pF @ 800V	119W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	22-PIM (33.8x42.5)
CAB011M12FM3T MOSFET 2N-CH 1200V 105A MODULE Wolfspeed, Inc.	38	-	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	105A (Tj)	14mOhm @ 100A, 15V	3.6V @ 35mA	324nC @ 15V	10300pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
CCB032M12FM3T MOSFET 6N-CH 1200V 40A MODULE Wolfspeed, Inc.	33	-	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	-	1200V (1.2kV)	40A (Tj)	42.6mOhm @ 30A, 15V	3.6V @ 11.5mA	118nC @ 15V	3400pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module

FET, MOSFET Arrays FAQ

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