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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
EPC2106 EPC

EPC2106

MOSFET 2N-CH 100V 1.7A DIE

EPC

59,446 -
Datasheet eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 1.7A 70mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount Die
EPC2103 EPC

EPC2103

MOSFET 2N-CH 80V 28A DIE

EPC

5,410 -
Datasheet eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 80V 28A 5.5mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V - -40°C ~ 150°C (TJ) - - Surface Mount Die
EPC2107 EPC

EPC2107

MOSFET 3N-CH 100V 9BGA

EPC

5,182 -
Datasheet eGaN® 9-VFBGA Tape & Reel (TR) Active GaNFET (Gallium Nitride) 3 N-Channel (Half Bridge + Synchronous Bootstrap) - 100V 1.7A, 500mA 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V 2.5V @ 100µA, 2.5V @ 20µA 0.16nC @ 5V, 0.044nC @ 5V 16pF @ 50V, 7pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount 9-BGA (1.35x1.35)
EPC2110 EPC

EPC2110

MOSFET 2N-CH 120V 3.4A DIE

EPC

12,304 -
Datasheet eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Dual) Common Source - 120V 3.4A 60mOhm @ 4A, 5V 2.5V @ 700µA 0.8nC @ 5V 80pF @ 60V - -40°C ~ 150°C (TJ) - - - Die
EPC2221 EPC

EPC2221

MOSFET 2N-CH 100V 5A DIE

EPC

4,063 -
Datasheet - Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Dual) Common Source - 100V 5A - - - - - 150°C (TJ) - - Surface Mount Die
EPC2111 EPC

EPC2111

MOSFET 2N-CH 30V 16A DIE

EPC

19,151 -
Datasheet - Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 30V 16A (Ta) 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V 2.5V @ 5mA 2.2nC @ 5V, 5.7nC @ 5V 230pF @ 15V, 590pF @ 15V - -40°C ~ 150°C (TJ) - - Surface Mount Die
EPC2104 EPC

EPC2104

MOSFET 2N-CH 100V 23A DIE

EPC

3,154 -
Datasheet eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 23A 6.3mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount Die
EPC2102 EPC

EPC2102

MOSFET 2N-CH 60V 23A DIE

EPC

3,505 -
Datasheet eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 60V 23A 4.4mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V - -40°C ~ 150°C (TJ) - - Surface Mount Die
EPC2105 EPC

EPC2105

MOSFET 2N-CH 80V 9.5A/38A DIE

EPC

1,410 -
Datasheet eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 80V 9.5A, 38A 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V 2.5V @ 2.5mA, 2.5V @ 10mA 2.5nC @ 5V, 10nC @ 5V 300pF @ 40V, 1100pF @ 40V - -40°C ~ 150°C (TJ) - - Surface Mount Die
EPC2101 EPC

EPC2101

MOSFET 2N-CH 60V 9.5A/38A DIE

EPC

469 -
Datasheet eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 60V 9.5A, 38A 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V 2.5V @ 3mA, 2.5V @ 12mA 2.7nC @ 5V, 12nC @ 5V 300pF @ 30V, 1200pF @ 30V - -40°C ~ 150°C (TJ) - - Surface Mount Die
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FET, MOSFET Arrays FAQ

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