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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G3F45MT06J-TR GeneSiC Semiconductor

G3F45MT06J-TR

650V 40M TO-263-7 G3F SIC MOSFET

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 56A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F65MT12J-TR GeneSiC Semiconductor

G3F65MT12J-TR

1200V 65M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 37A (Tc) 18V 86mOhm @ 15A, 18V 4.3V @ 10mA 55 nC @ 18 V +22V, -10V 1298 pF @ 800 V - 171W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F65MT12K GeneSiC Semiconductor

G3F65MT12K

1200V 65M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

600 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 35A (Tc) 18V 86mOhm @ 15A, 18V 4.3V @ 10mA 55 nC @ 18 V +22V, -10V 1298 pF @ 800 V - 153W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3F45MT06D GeneSiC Semiconductor

G3F45MT06D

650V 40M TO-247-3 G3F SIC MOSFET

GeneSiC Semiconductor

600 -
Datasheet - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V - - - - - - - - - - - - Through Hole TO-247-3
G3F33MT06J-TR GeneSiC Semiconductor

G3F33MT06J-TR

650V 27M TO-263-7 G3F SIC MOSFET

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 80A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 261W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F45MT06K GeneSiC Semiconductor

G3F45MT06K

650V 40M TO-247-4 G3F SIC MOSFET

GeneSiC Semiconductor

600 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3F40MT12J-TR GeneSiC Semiconductor

G3F40MT12J-TR

1200V 40M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 59A (Tc) 18V 53mOhm @ 20A, 18V 4.3V @ 16mA 86 nC @ 18 V +22V, -10V 2023 pF @ 800 V - 270W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F40MT12K GeneSiC Semiconductor

G3F40MT12K

1200V 40M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

552 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 55A (Tc) 18V 53mOhm @ 20A, 18V 4.3V @ 16mA 86 nC @ 18 V +22V, -10V 2023 pF @ 800 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3F33MT06K GeneSiC Semiconductor

G3F33MT06K

650V 27M TO-247-4 G3F SIC MOSFET

GeneSiC Semiconductor

600 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 74A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3R40MT12J-TR GeneSiC Semiconductor

G3R40MT12J-TR

1200V 40M TO-263-7 G3R SIC MOSFE

GeneSiC Semiconductor

630 -
Datasheet G3R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 15V, 18V 45mOhm @ 35A, 18V 2.7V @ 18mA 88 nC @ 15 V +22V, -10V 2897 pF @ 800 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
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FETs, MOSFETs FAQ

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