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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSC200P03LSG Infineon Technologies

BSC200P03LSG

P-CHANNEL POWER MOSFET

Infineon Technologies

8,671 -
Datasheet OptiMOS™ 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 9.9A (Ta), 12.5A (Tc) 10V 20mOhm @ 12.5A, 10V 1V @ 100µA 48.5 nC @ 10 V ±25V 2430 pF @ 15 V - 2.5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
BSB053N03LPG Infineon Technologies

BSB053N03LPG

N-CHANNEL POWER MOSFET

Infineon Technologies

5,000 -
Datasheet OptiMOS™ 3-WDSON Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 71A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2.2V @ 250µA 29 nC @ 10 V ±20V 2700 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
IPB052N04NG Infineon Technologies

IPB052N04NG

N-CHANNEL POWER MOSFET

Infineon Technologies

1,989 -
Datasheet OptiMOS™ 3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 5.2mOhm @ 70A, 10V 4V @ 33µA 42 nC @ 10 V ±20V 3300 pF @ 20 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO-263-3-2
BSP179H6327XTSA1 Infineon Technologies

BSP179H6327XTSA1

MOSFET N-CH 400V 210MA SOT223-4

Infineon Technologies

6,193 -
Datasheet SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 400 V 210mA (Ta) 0V, 10V 18Ohm @ 210mA, 10V 1V @ 94µA 6.8 nC @ 5 V ±20V 135 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
BSF885N03LQ3GXUMA1 Infineon Technologies

BSF885N03LQ3GXUMA1

N-CHANNEL POWER MOSFET

Infineon Technologies

240,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IPP60R950C6XKSA1 Infineon Technologies

IPP60R950C6XKSA1

MOSFET N-CH 600V 4.4A TO220-3

Infineon Technologies

7,309 -
Datasheet CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BSR302NL6327HTSA1 Infineon Technologies

BSR302NL6327HTSA1

MOSFET N-CH 30V 3.7A SC59

Infineon Technologies

2,581 -
Datasheet OptiMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.7A (Ta) 4.5V, 10V 23mOhm @ 3.7A, 10V 2V @ 30µA 6.6 nC @ 5 V ±20V 750 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SC59-3
SPS03N60C3AKMA1 Infineon Technologies

SPS03N60C3AKMA1

MOSFET N-CH 650V 3.2A TO251-3-11

Infineon Technologies

3,000 -
Datasheet CoolMOS™ TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
IPI80N04S4L04AKSA1 Infineon Technologies

IPI80N04S4L04AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

9,152 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.3mOhm @ 80A, 10V 2.2V @ 35µA 60 nC @ 10 V +20V, -16V 4690 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
BSF110N06NT3GXUMA1 Infineon Technologies

BSF110N06NT3GXUMA1

N-CHANNEL POWER MOSFET

Infineon Technologies

8,800 -
Datasheet OptiMOS™ 3 DirectFET™ Isometric ST Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 10V 11mOhm @ 30A, 10V 4V @ 33µA 46 nC @ 10 V ±20V 3700 pF @ 30 V - 38W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
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FETs, MOSFETs FAQ

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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