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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPD30N08S2L21ATMA1 Infineon Technologies

IPD30N08S2L21ATMA1

MOSFET N-CH 75V 30A TO252-3

Infineon Technologies

19,366 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 30A (Tc) 4.5V, 10V 20.5mOhm @ 25A, 10V 2V @ 80µA 72 nC @ 10 V ±20V 1650 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
SPA06N80C3XKSA1 Infineon Technologies

SPA06N80C3XKSA1

MOSFET N-CH 800V 6A TO220-FP

Infineon Technologies

11,995 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IRFH5210TRPBF Infineon Technologies

IRFH5210TRPBF

MOSFET N-CH 100V 10A/55A 8PQFN

Infineon Technologies

8,349 -
Datasheet HEXFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 55A (Tc) 10V 14.9mOhm @ 33A, 10V 4V @ 100µA 59 nC @ 10 V ±20V 2570 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IPI086N10N3GXKSA1 Infineon Technologies

IPI086N10N3GXKSA1

MOSFET N-CH 100V 80A TO262-3

Infineon Technologies

242 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPD65R660CFDAATMA1 Infineon Technologies

IPD65R660CFDAATMA1

MOSFET N-CH 650V 6A TO252-3

Infineon Technologies

4,536 -
Datasheet CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 3.22A, 10V 4.5V @ 214.55µA 20 nC @ 10 V ±20V 543 pF @ 100 V - 62.5W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3
IPD65R380E6ATMA1 Infineon Technologies

IPD65R380E6ATMA1

MOSFET N-CH 650V 10.6A TO252-3

Infineon Technologies

477 -
Datasheet CoolMOS™ E6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
BSP135H6906XTSA1 Infineon Technologies

BSP135H6906XTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies

14,161 -
Datasheet SIPMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-SOT223-4
IRFH5250TRPBF Infineon Technologies

IRFH5250TRPBF

MOSFET N-CH 25V 45A/100A 8PQFN

Infineon Technologies

9,000 -
Datasheet HEXFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 45A (Ta), 100A (Tc) 4.5V, 10V 1.15mOhm @ 50A, 10V 2.35V @ 150µA 110 nC @ 10 V ±20V 7174 pF @ 13 V - 3.6W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IPA60R380P6XKSA1 Infineon Technologies

IPA60R380P6XKSA1

MOSFET N-CH 600V 10.6A TO220-FP

Infineon Technologies

437 -
Datasheet CoolMOS™ P6 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 4.5V @ 320µA 19 nC @ 10 V ±20V 877 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA80R600P7XKSA1 Infineon Technologies

IPA80R600P7XKSA1

MOSFET N-CHANNEL 800V 8A TO220

Infineon Technologies

398 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
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FETs, MOSFETs FAQ

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