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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPP60R520CP Infineon Technologies

IPP60R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies

500 -
Datasheet CoolMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP50N10S3L16AKSA1 Infineon Technologies

IPP50N10S3L16AKSA1

MOSFET N-CH 100V 50A TO220-3

Infineon Technologies

6,531 -
Datasheet OptiMOS™ T TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 15.7mOhm @ 50A, 10V 2.4V @ 60µA 64 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPI80N06S207AKSA1 Infineon Technologies

IPI80N06S207AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

8,939 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI052NE7N3G Infineon Technologies

IPI052NE7N3G

N-CHANNEL POWER MOSFET

Infineon Technologies

396 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPP057N06N3GXKSA1 Infineon Technologies

IPP057N06N3GXKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

7,102 -
Datasheet OptiMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
SPB80N06SL2-7 Infineon Technologies

SPB80N06SL2-7

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies

600 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 2V @ 150µA 130 nC @ 10 V ±20V 3160 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPDH6N03LAG Infineon Technologies

IPDH6N03LAG

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies

81 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 2V @ 30µA 19 nC @ 5 V ±20V 2390 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPI100N04S3-03 Infineon Technologies

IPI100N04S3-03

N-CHANNEL POWER MOSFET

Infineon Technologies

722 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IPB100N06S3-04 Infineon Technologies

IPB100N06S3-04

MOSFET N-CH 55V 100A TO263-3

Infineon Technologies

7,353 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 150µA 314 nC @ 10 V ±20V 14230 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
SPU07N60C3BKMA1 Infineon Technologies

SPU07N60C3BKMA1

MOSFET N-CH 650V 7.3A TO251-3

Infineon Technologies

4,443 -
Datasheet CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-21
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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