FETs, MOSFETs
Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.
For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMW65R060M2HXKSA1IMW65R060M2HXKSA1 |
2,932 | - |
|
Datasheet | CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 32.8A (Tc) | 15V, 20V | 55mOhm @ 15.4A, 20V | 5.6V @ 3.1mA | 19 nC @ 18 V | +23V, -7V | 669 pF @ 400 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
|
IPZA60R045P7XKSA1MOSFET N-CH 650V 61A TO247-4-3 |
8,983 | - |
|
Datasheet | CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 61A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 4V @ 1.08mA | 90 nC @ 10 V | ±20V | 3891 pF @ 400 V | - | 201W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
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GS61008P-MRGS61008P-MR |
3,880 | - |
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Datasheet | - | 5-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | 2.6V @ 7mA | 8 nC @ 6 V | +7V, -10V | 600 pF @ 50 V | - | - | -55°C ~ 150°C | - | - | Surface Mount | - |
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IMW65R040M2HXKSA1SILICON CARBIDE MOSFET |
8 | - |
|
Datasheet | CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V, 20V | 36mOhm @ 22.9A, 20V | 5.6V @ 4.6mA | 28 nC @ 18 V | +23V, -7V | 997 pF @ 400 V | - | 172W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
|
|
AIMZH120R120M1TXKSA1SIC_DISCRETE |
20 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V, 20V | 150mOhm @ 7A, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | +23V, -5V | 458 pF @ 800 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-11 |
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IPT025N15NM6ATMA1TRENCH >=100V |
8,457 | - |
|
Datasheet | OptiMOS™ 6 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 26A (Ta), 263A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | 4V @ 275µA | 137 nC @ 10 V | ±20V | 9800 pF @ 75 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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IPTG025N15NM6ATMA1TRENCH >=100V |
4,646 | - |
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Datasheet | OptiMOS™ 6 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 26A (Ta), 264A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | 4V @ 275µA | 137 nC @ 10 V | ±20V | 9800 pF @ 75 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IPTC025N15NM6ATMA1TRENCH >=100V |
3,259 | - |
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Datasheet | OptiMOS™ 6 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 26A (Ta), 264A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | 4V @ 275µA | 137 nC @ 10 V | ±20V | 9800 pF @ 75 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
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IMZC120R053M2HXKSA1IMZC120R053M2HXKSA1 |
4,190 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 38A (Tc) | 15V, 18V | 53mOhm @ 13A, 18V | 5.1V @ 4.1mA | 30 nC @ 18 V | +23V, -7V | 1010 pF @ 800 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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|
IGLT65R055D2ATMA1IGLT65R055D2ATMA1 |
7,300 | - |
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Datasheet | CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | 4.7 nC @ 3 V | -10V | 340 pF @ 400 V | - | 102W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
FETs, MOSFETs FAQ
How can I narrow the current FETs, MOSFETs selection?
Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.
Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?
Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.
Can I request a quotation for a BOM or small-batch requirement?
Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.
What information should I provide when requesting a quote?
Please provide the target part number, manufacturer, quantity and any required date code, package or delivery requirements so our team can respond more accurately.
