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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRLL2703TR Infineon Technologies

IRLL2703TR

MOSFET N-CH 30V 3.9A SOT223

Infineon Technologies

3,457 -
Datasheet HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.9A (Ta) 4V, 10V 45mOhm @ 3.9A, 10V 2.4V @ 250µA 14 nC @ 5 V ±16V 530 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
IRLMS1902TRPBF Infineon Technologies

IRLMS1902TRPBF

MOSFET N-CH 20V 3.2A MICRO6

Infineon Technologies

3,417 -
Datasheet HEXFET® SOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 2.7V, 4.5V 100mOhm @ 2.2A, 4.5V 700mV @ 250µA (Min) 7 nC @ 4.5 V ±12V 300 pF @ 15 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro6™(TSOP-6)
IRLML2502GTRPBF Infineon Technologies

IRLML2502GTRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

5,224 -
Datasheet HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 45mOhm @ 4.2A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V 740 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro3™/SOT-23
IRLML5103GTRPBF Infineon Technologies

IRLML5103GTRPBF

MOSFET P-CH 30V 0.76A SOT-23-3

Infineon Technologies

4,037 -
Datasheet HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 760mA (Ta) 4.5V, 10V 600mOhm @ 600mA, 10V 1V @ 250µA 5.1 nC @ 10 V ±20V 75 pF @ 25 V - 540mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro3™/SOT-23
IPD60R2K1CEBTMA1 Infineon Technologies

IPD60R2K1CEBTMA1

MOSFET N-CH 600V 2.3A TO252-3

Infineon Technologies

6,447 -
Datasheet CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
SPP02N60S5HKSA1 Infineon Technologies

SPP02N60S5HKSA1

MOSFET N-CH 600V 1.8A TO220-3

Infineon Technologies

4,080 -
Datasheet CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IRLU8113PBF Infineon Technologies

IRLU8113PBF

MOSFET N-CH 30V 94A I-PAK

Infineon Technologies

6,082 -
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 94A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.25V @ 250µA 32 nC @ 4.5 V ±20V 2920 pF @ 15 V - 89W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
IPA60R360P7SE8228XKSA1 Infineon Technologies

IPA60R360P7SE8228XKSA1

MOSFET N-CH 600V 9A TO220

Infineon Technologies

3,412 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IRLZ44ZPBF Infineon Technologies

IRLZ44ZPBF

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies

6,878 -
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SPU02N60C3BKMA1 Infineon Technologies

SPU02N60C3BKMA1

MOSFET N-CH 650V 1.8A TO251-3

Infineon Technologies

2,223 -
Datasheet CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-21
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

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