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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPL65R195C7AUMA1 Infineon Technologies

IPL65R195C7AUMA1

MOSFET N-CH 650V 12A 4VSON

Infineon Technologies

1,137 -
Datasheet CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 195mOhm @ 2.9A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 75W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPP019N08NF2SAKMA1 Infineon Technologies

IPP019N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

896 -
Datasheet StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 191A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPB80N06S2L06ATMA2 Infineon Technologies

IPB80N06S2L06ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

891 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IRFB3207PBF Infineon Technologies

IRFB3207PBF

MOSFET N-CH 75V 170A TO220AB

Infineon Technologies

930 -
Datasheet HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPB039N10N3GATMA1 Infineon Technologies

IPB039N10N3GATMA1

MOSFET N-CH 100V 160A TO263-7

Infineon Technologies

29,577 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 6V, 10V 3.9mOhm @ 100A, 10V 3.5V @ 160µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
IRFB3206GPBF Infineon Technologies

IRFB3206GPBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies

522 -
Datasheet HEXFET® TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SPA11N80C3XKSA2 Infineon Technologies

SPA11N80C3XKSA2

MOSFET N-CH 800V 11A TO220-3

Infineon Technologies

189 -
Datasheet CoolMOS™ TO-220-3 Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 85 nC @ 10 V ±20V 1600 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP65R190CFDXKSA2 Infineon Technologies

IPP65R190CFDXKSA2

MOSFET N-CH 650V 17.5A TO220-3

Infineon Technologies

1,391 -
Datasheet CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPL60R125P7AUMA1 Infineon Technologies

IPL60R125P7AUMA1

MOSFET N-CH 600V 27A 4VSON

Infineon Technologies

5,365 -
Datasheet CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 125mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 111W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IRF3808STRLPBF Infineon Technologies

IRF3808STRLPBF

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies

2,847 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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FETs, MOSFETs FAQ

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