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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF7488TRPBF Infineon Technologies

IRF7488TRPBF

MOSFET N-CH 80V 6.3A 8SO

Infineon Technologies

2,424 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta) 10V 29mOhm @ 3.8A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IPAW60R600P7SXKSA1 Infineon Technologies

IPAW60R600P7SXKSA1

MOSFET N-CH 600V 6A TO220

Infineon Technologies

6,351 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPB80N04S304ATMA1 Infineon Technologies

IPB80N04S304ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

7,793 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.8mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
SPB80N06S2-H5 Infineon Technologies

SPB80N06S2-H5

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

6,258 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 5500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IRF7493TR Infineon Technologies

IRF7493TR

MOSFET N-CH 80V 9.3A 8SO

Infineon Technologies

7,110 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 15mOhm @ 5.6A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1510 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRLR4343 Infineon Technologies

IRLR4343

MOSFET N-CH 55V 26A DPAK

Infineon Technologies

2,547 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFB4229PBFXKMA1 Infineon Technologies

IRFB4229PBFXKMA1

TRENCH >=100V

Infineon Technologies

8,781 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 46A (Tc) 10V 46mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFR2605 Infineon Technologies

IRFR2605

MOSFET N-CH 55V 19A D-PAK

Infineon Technologies

9,508 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 85mOhm @ 11A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 420 pF @ 25 V - 50W (Tc) - - - Surface Mount TO-252AA (DPAK)
IRF8010STRRPBF Infineon Technologies

IRF8010STRRPBF

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies

3,195 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 15mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3830 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF630NSTRLPBF Infineon Technologies

IRF630NSTRLPBF

MOSFET N-CH 200V 9.3A D2PAK

Infineon Technologies

3,689 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

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