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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AUIRF1404Z Infineon Technologies

AUIRF1404Z

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies

2,933 -
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPA60R099C6XKSA1 Infineon Technologies

IPA60R099C6XKSA1

MOSFET N-CH 600V 37.9A TO220-FP

Infineon Technologies

8,458 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 18.1A, 10V 3.5V @ 1.21mA 119 nC @ 10 V ±20V 2660 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPC302N25N3AX1SA1 Infineon Technologies

IPC302N25N3AX1SA1

MOSFET N-CH 250V 1A SAWN ON FOIL

Infineon Technologies

6,014 -
Datasheet OptiMOS™ Die Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 1A (Tj) 10V 100mOhm @ 2A, 10V 4V @ 270µA - - - - - - - - Surface Mount Sawn on foil
IAUA250N04S6N007AUMA1 Infineon Technologies

IAUA250N04S6N007AUMA1

MOSFET_(20V 40V) PG-HSOF-5

Infineon Technologies

3,796 -
Datasheet OptiMOS™ 5-PowerSFN Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 435A (Tj) 7V, 10V 0.7mOhm @ 100A, 10V 3V @ 130µA 151 nC @ 10 V ±20V 9898 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
AIMZHN120R120M1TXKSA1 Infineon Technologies

AIMZHN120R120M1TXKSA1

SIC_DISCRETE

Infineon Technologies

3,653 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V, 20V 150mOhm @ 7A, 20V 5.1V @ 2.2mA 18 nC @ 20 V +23V, -5V 458 pF @ 800 V - 133W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
IRF2804STRL-7P Infineon Technologies

IRF2804STRL-7P

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies

4,769 -
Datasheet HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRFS3307 Infineon Technologies

IRFS3307

MOSFET N-CH 75V 130A D2PAK

Infineon Technologies

7,100 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPB160N04S2L03ATMA2 Infineon Technologies

IPB160N04S2L03ATMA2

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies

8,258 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 5 V ±20V 6000 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
IPB180N03S4L01ATMA1 Infineon Technologies

IPB180N03S4L01ATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies

7,688 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 1.05mOhm @ 100A, 10V 2.2V @ 140µA 239 nC @ 10 V ±16V 17600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
IRF3805LPBF Infineon Technologies

IRF3805LPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies

8,900 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

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