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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRLHM620TRPBF Infineon Technologies

IRLHM620TRPBF

MOSFET N-CH 20V 26A/40A PQFN

Infineon Technologies

10,726 -
Datasheet HEXFET® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 26A (Ta), 40A (Tc) 2.5V, 10V 2.5mOhm @ 20A, 4.5V 1.1V @ 50µA 78 nC @ 4.5 V ±12V 3620 pF @ 10 V - 2.7W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (3x3)
BSC034N03LSGATMA1 Infineon Technologies

BSC034N03LSGATMA1

MOSFET N-CH 30V 22A/100A TDSON

Infineon Technologies

4,994 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 100A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 52 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-5
BSC030N03MSGATMA1 Infineon Technologies

BSC030N03MSGATMA1

MOSFET N-CH 30V 21A/100A TDSON

Infineon Technologies

10,567 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 100A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2V @ 250µA 73 nC @ 10 V ±20V 5700 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
IPN80R1K2P7ATMA1 Infineon Technologies

IPN80R1K2P7ATMA1

MOSFET N-CH 800V 4.5A SOT223

Infineon Technologies

5,827 -
Datasheet CoolMOS™ P7 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 6.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223
IRFU3910PBF Infineon Technologies

IRFU3910PBF

MOSFET N-CH 100V 16A IPAK

Infineon Technologies

1,887 -
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
ISZ24DP10LMATMA1 Infineon Technologies

ISZ24DP10LMATMA1

TRENCH >=100V

Infineon Technologies

3,786 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 9.7A - - - - - - - - - - - Surface Mount PG-TDSON-8-25
IPD60R600P7ATMA1 Infineon Technologies

IPD60R600P7ATMA1

MOSFET N-CH 600V 6A TO252-3

Infineon Technologies

2,196 -
Datasheet CoolMOS™ P7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
ISZ0703NLSATMA1 Infineon Technologies

ISZ0703NLSATMA1

MOSFET N-CH 60V 13A/56A TSDSON

Infineon Technologies

17,201 -
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 56A (Tc) 4.5V, 10V 7.3mOhm @ 20A, 10V 2.3V @ 15µA 23 nC @ 10 V ±20V 1400 pF @ 30 V - 2.5W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8-25
IPD60R950C6ATMA1 Infineon Technologies

IPD60R950C6ATMA1

MOSFET N-CH 600V 4.4A TO252-3

Infineon Technologies

6,743 -
Datasheet CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD130N10NF2SATMA1 Infineon Technologies

IPD130N10NF2SATMA1

MOSFET

Infineon Technologies

1,934 -
Datasheet StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 52A (Tc) 6V, 10V 13mOhm @ 30A, 10V 3.8V @ 30µA 28 nC @ 10 V ±20V 1300 pF @ 50 V - 3W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

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