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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPDD60R050G7XTMA1 Infineon Technologies

IPDD60R050G7XTMA1

MOSFET N-CH 600V 47A HDSOP-10

Infineon Technologies

3,215 -
Datasheet CoolMOS™ G7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 50mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2670 pF @ 400 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
IMZA65R057M1HXKSA1 Infineon Technologies

IMZA65R057M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

150 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 35A (Tc) 18V 74mOhm @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V 930 pF @ 400 V - 133W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-3
AUIRFP4568-E Infineon Technologies

AUIRFP4568-E

MOSFET N-CH 150V 171A TO247AD

Infineon Technologies

355 -
Datasheet HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
IPW60R075CPFKSA1 Infineon Technologies

IPW60R075CPFKSA1

MOSFET N-CH 650V 39A TO247-3

Infineon Technologies

237 -
Datasheet CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 10V 75mOhm @ 26A, 10V 3.5V @ 1.7mA 116 nC @ 10 V ±20V 4000 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
AUIRFP4568 Infineon Technologies

AUIRFP4568

MOSFET N-CH 150V 171A TO247AC

Infineon Technologies

386 -
Datasheet HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
IPZA60R037P7XKSA1 Infineon Technologies

IPZA60R037P7XKSA1

MOSFET N-CH 600V 76A TO247-4

Infineon Technologies

194 -
Datasheet CoolMOS™ P7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 37mOhm @ 29.5A, 10V 4V @ 1.48mA 121 nC @ 10 V ±20V 5243 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
IPDQ60R022S7XTMA1 Infineon Technologies

IPDQ60R022S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

738 -
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5639 pF @ 300 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IMZA65R030M1HXKSA1 Infineon Technologies

IMZA65R030M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

144 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 53A (Tc) 18V 42mOhm @ 29.5A, 18V 5.7V @ 8.8mA 48 nC @ 18 V +20V, -2V 1643 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-3
IPZA65R018CFD7XKSA1 Infineon Technologies

IPZA65R018CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

238 -
Datasheet CoolMOS™ CFD7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 106A (Tc) 10V 18mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11660 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-3
AIMW120R060M1HXKSA1 Infineon Technologies

AIMW120R060M1HXKSA1

1200V COOLSIC MOSFET PG-TO247-3

Infineon Technologies

220 -
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 78mOhm @ 13A, 18V 5.7V @ 5.6mA 31 nC @ 18 V +23V, -7V 1060 pF @ 800 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3-41
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FETs, MOSFETs FAQ

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