FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FQB11P06TM MOSFET P-CH 60V 11.4A D2PAK onsemi	5,089	-	RFQ	Datasheet	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	11.4A (Tc)	10V	175mOhm @ 5.7A, 10V	4V @ 250µA	17 nC @ 10 V	±25V	550 pF @ 25 V	-	3.13W (Ta), 53W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
FQB5N50CTM MOSFET N-CH 500V 5A D2PAK onsemi	8,420	-	RFQ	Datasheet	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	1.4Ohm @ 2.5A, 10V	4V @ 250µA	24 nC @ 10 V	±30V	625 pF @ 25 V	-	73W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9540NSTRRPBF MOSFET P-CH 100V 23A D2PAK Infineon Technologies	8,835	-	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	117mOhm @ 14A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	1450 pF @ 25 V	-	3.1W (Ta), 110W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK
IPB60R600C6ATMA1 MOSFET N-CH 600V 7.3A D2PAK Infineon Technologies	8,915	-	RFQ	Datasheet	CoolMOS™ C6	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	3.5V @ 200µA	20.5 nC @ 10 V	±20V	440 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3
NVD6824NLT4G MOSFET N-CH 100V 8.5A/41A DPAK onsemi	8,073	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	8.5A (Ta), 41A (Tc)	4.5V, 10V	20mOhm @ 20A, 10V	2.5V @ 250µA	66 nC @ 10 V	±20V	3468 pF @ 25 V	-	3.9W (Ta), 90W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	DPAK
IRFR7740TRPBF MOSFET N-CH 75V 87A DPAK Infineon Technologies	3,617	-	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	87A (Tc)	6V, 10V	7.2mOhm @ 52A, 10V	3.7V @ 100µA	126 nC @ 10 V	±20V	4430 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
TSM70N10CP ROG MOSFET N-CHANNEL 100V 70A TO252 Taiwan Semiconductor Corporation	7,867	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	70A (Tc)	10V	13mOhm @ 30A, 10V	4V @ 250µA	145 nC @ 10 V	±20V	4300 pF @ 30 V	-	120W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
NTMFS5H663NLT1G T8 60V LOW COSS onsemi	2,484	-	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	15A (Ta)	4.5V, 10V	7.2mOhm @ 20A, 10V	2V @ 56µA	17 nC @ 10 V	±20V	1131 pF @ 30 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)
IPI600N25N3GAKSA1 MOSFET N-CH 250V 25A TO262-3 Infineon Technologies	2,820	-	RFQ	Datasheet	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	25A (Tc)	10V	60mOhm @ 25A, 10V	4V @ 90µA	29 nC @ 10 V	±20V	2350 pF @ 100 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3
STB200NF04L-1 MOSFET N-CH 40V 120A I2PAK STMicroelectronics	4,649	-	RFQ	Datasheet	STripFET™ II	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	5V, 10V	3.8mOhm @ 50A, 10V	4V @ 250µA	90 nC @ 4.5 V	±16V	6400 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
STB11NM60N-1 MOSFET N-CH 600V 10A I2PAK STMicroelectronics	4,786	-	RFQ	Datasheet	MDmesh™ II	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	450mOhm @ 5A, 10V	4V @ 250µA	31 nC @ 10 V	±25V	850 pF @ 50 V	-	90W (Tc)	150°C (TJ)	-	-	Through Hole	I2PAK
STI11NM60ND MOSFET N-CH 600V 10A I2PAK STMicroelectronics	7,985	-	RFQ	Datasheet	FDmesh™ II	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	450mOhm @ 5A, 10V	5V @ 250µA	30 nC @ 10 V	±25V	850 pF @ 50 V	-	90W (Tc)	150°C (TJ)	-	-	Through Hole	I2PAK
TSM043NB04LCZ 40V, 124A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	7,567	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	16A (Ta), 124A (Tc)	4.5V, 10V	4.3mOhm @ 16A, 10V	2.5V @ 250µA	76 nC @ 10 V	±20V	4387 pF @ 20 V	-	2W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
TSM10N80CZ C0G MOSFET N-CH 800V 9.5A TO220 Taiwan Semiconductor Corporation	3,878	-	RFQ	Datasheet	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	9.5A (Tc)	10V	1.05Ohm @ 4.75A, 10V	4V @ 250µA	53 nC @ 10 V	±30V	2336 pF @ 25 V	-	290W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
64-0007 MOSFET N-CH 200V 18A TO220AB Infineon Technologies	2,690	-	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRF1010EZ MOSFET N-CH 60V 75A TO220AB Infineon Technologies	7,817	-	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	8.5mOhm @ 51A, 10V	4V @ 100µA	86 nC @ 10 V	±20V	2810 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRL3103D2 MOSFET N-CH 30V 54A TO220AB Infineon Technologies	5,016	-	RFQ	Datasheet	FETKY™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	54A (Tc)	4.5V, 10V	14mOhm @ 32A, 10V	1V @ 250µA	44 nC @ 4.5 V	±16V	2300 pF @ 25 V	-	2W (Ta), 70W (Tc)	-	-	-	Through Hole	TO-220AB
IRFZ48ZS MOSFET N-CH 55V 61A D2PAK Infineon Technologies	7,630	-	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	61A (Tc)	10V	11mOhm @ 37A, 10V	4V @ 250µA	64 nC @ 10 V	±20V	1720 pF @ 25 V	-	91W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF9410 MOSFET N-CH 30V 7A 8SO Infineon Technologies	5,100	-	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	7A (Ta)	4.5V, 10V	30mOhm @ 7A, 10V	1V @ 250µA	27 nC @ 10 V	±20V	550 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRFR9210 MOSFET P-CH 200V 1.9A DPAK Vishay Siliconix	8,612	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	1.9A (Tc)	10V	3Ohm @ 1.1A, 10V	4V @ 250µA	8.9 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.