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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT50M75JLLU2 Microchip Technology

APT50M75JLLU2

MOSFET N-CH 500V 51A SOT227

Microchip Technology

31 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 25.5A, 10V 5V @ 1mA 123 nC @ 10 V ±30V 5590 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
MSC015SMA070S Microchip Technology

MSC015SMA070S

SICFET N-CH 700V 126A D3PAK

Microchip Technology

20 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 126A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA (Typ) 215 nC @ 20 V +23V, -10V 4500 pF @ 700 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT10M11LVRG Microchip Technology

APT10M11LVRG

MOSFET N-CH 100V 100A TO264

Microchip Technology

19 -
Datasheet POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 2.5mA 450 nC @ 10 V ±30V 10300 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
MSC40SM120JCU2 Microchip Technology

MSC40SM120JCU2

SICFET N-CH 1.2KV 55A SOT227

Microchip Technology

12 -
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
MSC017SMA120B4 Microchip Technology

MSC017SMA120B4

MOSFET SIC 1200V 17 MOHM TO-247

Microchip Technology

16 -
Datasheet - TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 113A (Tc) 20V 22mOhm @ 40A, 20V 2.7V @ 4.5mA (Typ) 249 nC @ 20 V +22V, -10V 5280 pF @ 1000 V - 455W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
APT58M80J Microchip Technology

APT58M80J

MOSFET N-CH 800V 60A SOT227

Microchip Technology

2 -
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 60A (Tc) 10V 110mOhm @ 43A, 10V 5V @ 5mA 570 nC @ 10 V ±30V 17550 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
MSC70SM120JCU3 Microchip Technology

MSC70SM120JCU3

SICFET N-CH 1.2KV 89A SOT227

Microchip Technology

5 -
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APT10M19BVRG Microchip Technology

APT10M19BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology

53 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - - - Through Hole TO-247 [B]
APT5015BVFRG Microchip Technology

APT5015BVFRG

MOSFET N-CH 500V 32A TO247

Microchip Technology

40 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) - 150mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - - - Through Hole TO-247 [B]
MSC040SMA120B4N Microchip Technology

MSC040SMA120B4N

MOSFET SIC 1200 V 40 MOHM TO-247

Microchip Technology

60 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 71A (Tc) 18V, 20V 50mOhm @ 40A, 20V 5V @ 2mA 137 nC @ 20 V +23V, -10V 1962 pF @ 1000 V - 372W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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