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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT100MC120JCU2 Microchip Technology

APT100MC120JCU2

SICFET N-CH 1200V 143A SOT227

Microchip Technology

8,508 -
Datasheet - SOT-227-4, miniBLOC Bulk Last Time Buy N-Channel SiCFET (Silicon Carbide) 1200 V 143A (Tc) 20V 17mOhm @ 100A, 20V 2.3V @ 2mA 360 nC @ 20 V +25V, -10V 5960 pF @ 1000 V - 600W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT50MC120JCU2 Microchip Technology

APT50MC120JCU2

MOSFET N-CH 1200V 71A SOT227

Microchip Technology

6,825 -
Datasheet - SOT-227-4, miniBLOC Bulk Last Time Buy N-Channel MOSFET (Metal Oxide) 1200 V 71A (Tc) 20V 34mOhm @ 50A, 20V 2.3V @ 1mA (Typ) 179 nC @ 20 V +25V, -10V 2980 pF @ 1000 V - 300W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT1001R1BN Microchip Technology

APT1001R1BN

MOSFET N-CH 1000V 10.5A TO247AD

Microchip Technology

6,643 -
Datasheet POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 10.5A (Tc) 10V 1.1Ohm @ 5.25A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
APT1001RBN Microchip Technology

APT1001RBN

MOSFET N-CH 1000V 11A TO247AD

Microchip Technology

8,115 -
Datasheet POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) 10V 1Ohm @ 5.5A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
APT5020BN Microchip Technology

APT5020BN

MOSFET N-CH 500V 28A TO247AD

Microchip Technology

8,858 -
Datasheet POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 28A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
APT5020BNFR Microchip Technology

APT5020BNFR

MOSFET N-CH 500V 28A TO247AD

Microchip Technology

4,485 -
Datasheet POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 28A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
TN2130K1-G-VAO Microchip Technology

TN2130K1-G-VAO

MOSFET N-CH 300V 85MA SOT23-3

Microchip Technology

7,914 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300 V 85mA (Tj) 4.5V 25Ohm @ 120mA, 4.5V 2.4V @ 1mA - ±20V 50 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TA) - - Surface Mount SOT-23-3
TP5335K1-G-VAO Microchip Technology

TP5335K1-G-VAO

MOSFET P-CH 350V 85MA SOT23-3

Microchip Technology

6,071 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 350 V 85mA (Tj) 4.5V, 10V 30Ohm @ 200mA, 10V 2.4V @ 1mA - ±20V 110 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
MSC080SMA120SA Microchip Technology

MSC080SMA120SA

MOSFET SIC 1200 V 80 MOHM TO-263

Microchip Technology

2,602 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
MSC025SMA330B4 Microchip Technology

MSC025SMA330B4

MOSFET SIC 3300 V 25 MOHM TO-247

Microchip Technology

5,810 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 104A (Tc) 20V 31mOhm @ 40A, 20V 2.7V @ 7mA 410 nC @ 20 V +23V, -10V 8720 pF @ 2640 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

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What information should I provide when requesting a quote?

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