PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
2SK4016(Q) Toshiba Semiconductor and Storage

2SK4016(Q)

MOSFET N-CH 600V 13A TO220SIS

Toshiba Semiconductor and Storage

2,536 -
Datasheet - TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 500mOhm @ 6.5A, 10V 4V @ 1mA 62 nC @ 10 V ±30V 3100 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
2SK4017(Q) Toshiba Semiconductor and Storage

2SK4017(Q)

MOSFET N-CH 60V 5A PW-MOLD2

Toshiba Semiconductor and Storage

7,745 -
Datasheet U-MOSIII TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 100mOhm @ 2.5A, 10V 2.5V @ 1mA 15 nC @ 10 V ±20V 730 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Through Hole PW-MOLD2
2SK4021(Q) Toshiba Semiconductor and Storage

2SK4021(Q)

MOSFET N-CH 250V 4.5A PW-MOLD2

Toshiba Semiconductor and Storage

5,117 -
Datasheet - TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.5A (Ta) 10V 1Ohm @ 2.5A, 10V 3.5V @ 1mA 10 nC @ 10 V ±20V 440 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Through Hole PW-MOLD2
TPC8026(TE12L,Q,M) Toshiba Semiconductor and Storage

TPC8026(TE12L,Q,M)

MOSFET N-CH 30V 13A 8SOP

Toshiba Semiconductor and Storage

8,352 -
Datasheet - 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 6.6mOhm @ 6.5A, 10V 2.5V @ 1mA 42 nC @ 10 V ±20V 1800 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
TPC8036-H(TE12L,QM Toshiba Semiconductor and Storage

TPC8036-H(TE12L,QM

MOSFET N-CH 30V 18A 8SOP

Toshiba Semiconductor and Storage

8,406 -
Datasheet U-MOSVI-H 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.5mOhm @ 9A, 10V 2.3V @ 1mA 49 nC @ 10 V ±20V 4600 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
TPCA8036-H(TE12L,Q Toshiba Semiconductor and Storage

TPCA8036-H(TE12L,Q

MOSFET N-CH 30V 38A 8SOP

Toshiba Semiconductor and Storage

6,978 -
Datasheet U-MOSVI-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Ta) 4.5V, 10V 4.2mOhm @ 19A, 10V 2.3V @ 500µA 50 nC @ 10 V ±20V 4600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
TPCA8A02-H(TE12LQM Toshiba Semiconductor and Storage

TPCA8A02-H(TE12LQM

MOSFET N-CH 30V 34A 8SOP

Toshiba Semiconductor and Storage

7,670 -
Datasheet U-MOSV-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 5.3mOhm @ 17A, 10V 2.3V @ 1mA 36 nC @ 10 V ±20V 3430 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
TPCA8A04-H(TE12L,Q Toshiba Semiconductor and Storage

TPCA8A04-H(TE12L,Q

MOSFET N-CH 30V 44A 8SOP

Toshiba Semiconductor and Storage

7,418 -
Datasheet U-MOSV-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Ta) 4.5V, 10V 3.2mOhm @ 22A, 10V 2.3V @ 1mA 59 nC @ 10 V ±20V 5700 pF @ 10 V - - 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
TPCP8003-H(TE85L,F Toshiba Semiconductor and Storage

TPCP8003-H(TE85L,F

MOSFET N-CH 100V 2.2A PS-8

Toshiba Semiconductor and Storage

4,078 -
Datasheet U-MOSIII-H 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 2.2A (Ta) 4.5V, 10V 180mOhm @ 1.1A, 10V 2.3V @ 1mA 7.5 nC @ 10 V ±20V 360 pF @ 10 V - 840mW (Ta) 150°C (TJ) - - Surface Mount PS-8 (2.9x2.4)
TK10A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK10A60D(STA4,Q,M)

MOSFET N-CH 600V 10A TO220SIS

Toshiba Semiconductor and Storage

4,140 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 750mOhm @ 5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK13A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK13A60D(STA4,Q,M)

MOSFET N-CH 600V 13A TO220SIS

Toshiba Semiconductor and Storage

6,464 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 430mOhm @ 6.5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK6A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A60D(STA4,Q,M)

MOSFET N-CH 600V 6A TO220SIS

Toshiba Semiconductor and Storage

9,901 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPC8042(TE12L,Q,M) Toshiba Semiconductor and Storage

TPC8042(TE12L,Q,M)

MOSFET N-CH 30V 18A 8SOP

Toshiba Semiconductor and Storage

4,114 -
Datasheet U-MOSIV 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 3.4mOhm @ 9A, 10V 2.5V @ 1mA 56 nC @ 10 V ±20V 2900 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
TPC8048-H(TE12L,Q) Toshiba Semiconductor and Storage

TPC8048-H(TE12L,Q)

MOSFET N-CH 60V 16A 8SOP

Toshiba Semiconductor and Storage

4,865 -
Datasheet U-MOSVI-H 8-SOIC (0.173", 4.40mm Width) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 16A (Ta) 4.5V, 10V 6.9mOhm @ 8A, 10V 2.3V @ 1mA 87 nC @ 10 V ±20V 7540 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
NTD5806NT4G onsemi

NTD5806NT4G

MOSFET N-CH 40V 33A DPAK

onsemi

9,987 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 33A (Tc) 4.5V, 10V 19mOhm @ 15A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
RDN050N20FU6 Rohm Semiconductor

RDN050N20FU6

MOSFET N-CH 200V 5A TO220FN

Rohm Semiconductor

9,340 -
Datasheet - TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5A (Ta) 10V 720mOhm @ 2.5A, 10V 4V @ 1mA 18.6 nC @ 10 V ±30V 292 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FN
RDN100N20FU6 Rohm Semiconductor

RDN100N20FU6

MOSFET N-CH 200V 10A TO220FN

Rohm Semiconductor

6,739 -
Datasheet - TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 10A (Ta) 10V 360mOhm @ 5A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 543 pF @ 10 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220FN
RDN150N20FU6 Rohm Semiconductor

RDN150N20FU6

MOSFET N-CH 200V 15A TO220FN

Rohm Semiconductor

3,676 -
Datasheet - TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 15A (Ta) 10V 160mOhm @ 7.5A, 10V 4V @ 1mA 64 nC @ 10 V ±30V 1224 pF @ 10 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FN
BSC152N10NSFGATMA1 Infineon Technologies

BSC152N10NSFGATMA1

MOSFET N-CH 100V 9.4A/63A TDSON

Infineon Technologies

4,163 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta), 63A (Tc) 10V 15.2mOhm @ 25A, 10V 4V @ 72µA 29 nC @ 10 V ±20V 1900 pF @ 50 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
BSC200P03LSGAUMA1 Infineon Technologies

BSC200P03LSGAUMA1

MOSFET P-CH 30V 9.9/12.5A 8TDSON

Infineon Technologies

7,788 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 9.9A (Ta), 12.5A (Tc) 10V 20mOhm @ 12.5A, 10V 2.2V @ 100µA 48.5 nC @ 10 V ±25V 2430 pF @ 15 V - 2.5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
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FETs, MOSFETs FAQ

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