PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPD50N06S409ATMA1 Infineon Technologies

IPD50N06S409ATMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies

2,624 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 34µA 47 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD60R520C6BTMA1 Infineon Technologies

IPD60R520C6BTMA1

MOSFET N-CH 600V 8.1A TO252-3

Infineon Technologies

4,054 -
Datasheet CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD90N06S404ATMA1 Infineon Technologies

IPD90N06S404ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

2,398 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S405ATMA1 Infineon Technologies

IPD90N06S405ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

5,826 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 5.1mOhm @ 90A, 10V 4V @ 60µA 81 nC @ 10 V ±20V 6500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S407ATMA1 Infineon Technologies

IPD90N06S407ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

3,939 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 6.9mOhm @ 90A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S4L03ATMA1 Infineon Technologies

IPD90N06S4L03ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

8,216 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S4L05ATMA1 Infineon Technologies

IPD90N06S4L05ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

3,262 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 4.6mOhm @ 90A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S4L06ATMA1 Infineon Technologies

IPD90N06S4L06ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

5,665 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 6.3mOhm @ 90A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPI023NE7N3 G Infineon Technologies

IPI023NE7N3 G

MOSFET N-CH 75V 120A TO262-3

Infineon Technologies

8,539 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) - 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V - 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI034NE7N3 G Infineon Technologies

IPI034NE7N3 G

MOSFET N-CH 75V 100A TO262-3

Infineon Technologies

7,700 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) - 3.4mOhm @ 100A, 10V 3.8V @ 155µA 117 nC @ 10 V - 8130 pF @ 37.5 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI052NE7N3 G Infineon Technologies

IPI052NE7N3 G

MOSFET N-CH 75V 80A TO262-3

Infineon Technologies

2,885 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI126N10N3 G Infineon Technologies

IPI126N10N3 G

MOSFET N-CH 100V 58A TO262-3

Infineon Technologies

5,326 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 6V, 10V 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI45N06S4L08AKSA1 Infineon Technologies

IPI45N06S4L08AKSA1

MOSFET N-CH 60V 45A TO262-3

Infineon Technologies

7,975 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 8.2mOhm @ 45A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI45P03P4L11AKSA1 Infineon Technologies

IPI45P03P4L11AKSA1

MOSFET P-CH 30V 45A TO262-3

Infineon Technologies

5,897 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 11.1mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI50R199CPXKSA1 Infineon Technologies

IPI50R199CPXKSA1

MOSFET N-CH 500V 17A TO262-3

Infineon Technologies

3,561 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI60R380C6XKSA1 Infineon Technologies

IPI60R380C6XKSA1

MOSFET N-CH 600V 10.6A TO262-3

Infineon Technologies

6,116 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S405AKSA1 Infineon Technologies

IPI80N06S405AKSA1

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

9,896 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 60µA 81 nC @ 10 V ±20V 6500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S407AKSA1 Infineon Technologies

IPI80N06S407AKSA1

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

5,134 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80P03P4L04AKSA1 Infineon Technologies

IPI80P03P4L04AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

9,980 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80P03P4L07AKSA1 Infineon Technologies

IPI80P03P4L07AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

8,499 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 7.2mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
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COMPONENT SOURCING SUPPORT

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FETs, MOSFETs FAQ

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You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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