PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
R6009END3TL1 Rohm Semiconductor

R6009END3TL1

MOSFET N-CH 600V 9A TO252

Rohm Semiconductor

5,016 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 94W (Tc) 150°C (TJ) - - Surface Mount TO-252
SIR846DP-T1-GE3 Vishay Siliconix

SIR846DP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix

1,980 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 7.5V, 10V 7.8mOhm @ 20A, 10V 3.5V @ 250µA 72 nC @ 10 V ±20V 2870 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
RJK1054DPB-00#J5 Renesas Electronics Corporation

RJK1054DPB-00#J5

MOSFET N-CH 100V 20A LFPAK

Renesas Electronics Corporation

2,475 -
Datasheet - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 10V 22mOhm @ 10A, 10V - 27 nC @ 10 V ±20V 2000 pF @ 10 V - 55W (Tc) 150°C (TJ) - - Surface Mount LFPAK
NP50P04SLG-E1-AY Renesas Electronics Corporation

NP50P04SLG-E1-AY

MP-3ZK

Renesas Electronics Corporation

3,960 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) 4.5V, 10V 9.6mOhm @ 25A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 5700 pF @ 10 V - 1.2W (Ta), 84W (Tc) 175°C - - Surface Mount TO-252 (MP-3ZK)
SIHA12N60E-E3 Vishay Siliconix

SIHA12N60E-E3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix

923 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHD186N60EF-GE3 Vishay Siliconix

SIHD186N60EF-GE3

MOSFET N-CH 600V 19A DPAK

Vishay Siliconix

6,140 -
Datasheet EF TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 201mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1118 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
R6007ENXC7G Rohm Semiconductor

R6007ENXC7G

600V 7A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

1,996 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 620mOhm @ 2.4A, 10V 4V @ 1mA 20 nC @ 10 V ±20V 390 pF @ 25 V - 46W (Tc) 150°C (TJ) - - Through Hole TO-220FM
SI4368DY-T1-E3 Vishay Siliconix

SI4368DY-T1-E3

MOSFET N-CH 30V 17A 8SO

Vishay Siliconix

1,110 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 3.2mOhm @ 25A, 10V 1.8V @ 250µA 80 nC @ 4.5 V ±12V 8340 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SIHF12N65E-GE3 Vishay Siliconix

SIHF12N65E-GE3

MOSFET N-CH 650V 12A TO220

Vishay Siliconix

993 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IRF840ASTRLPBF Vishay Siliconix

IRF840ASTRLPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

675 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IXTP05N100 Littelfuse Inc.

IXTP05N100

MOSFET N-CH 1000V 750MA TO220AB

Littelfuse Inc.

300 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 750mA (Tc) 10V 17Ohm @ 375mA, 10V 4.5V @ 250µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SIDR104ADP-T1-RE3 Vishay Siliconix

SIDR104ADP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK

Vishay Siliconix

5,920 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18.8A (Ta), 81A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
IPD95R450PFD7ATMA1 Infineon Technologies

IPD95R450PFD7ATMA1

MOSFET N-CH 950V 13.3A TO252-3

Infineon Technologies

2,466 -
Datasheet CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 950 V 13.3A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 43 nC @ 10 V ±20V 1230 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
R6006JNXC7G Rohm Semiconductor

R6006JNXC7G

MOSFET N-CH 600V 6A TO220FM

Rohm Semiconductor

869 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 15V 936mOhm @ 3A, 15V 7V @ 800µA 15.5 nC @ 15 V ±30V 410 pF @ 100 V - 43W (Tc) 150°C (TJ) - - Through Hole TO-220FM
BSC011N03LSTATMA1 Infineon Technologies

BSC011N03LSTATMA1

MOSFET N-CH 30V 39A/100A TDSON

Infineon Technologies

5,000 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 39A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2V @ 250µA 48 nC @ 4.5 V ±20V 6300 pF @ 15 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
TK1R5R04PB,LXGQ Toshiba Semiconductor and Storage

TK1R5R04PB,LXGQ

MOSFET N-CH 40V 160A D2PAK

Toshiba Semiconductor and Storage

2,900 -
Datasheet U-MOSIX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1.5mOhm @ 80A, 10V 3V @ 500µA 103 nC @ 10 V ±20V 5500 pF @ 10 V - 205W (Tc) 175°C - - Surface Mount D2PAK+
R6009JND3TL1 Rohm Semiconductor

R6009JND3TL1

MOSFET N-CH 600V 9A TO252

Rohm Semiconductor

2,450 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 15V 585mOhm @ 4.5A, 15V 7V @ 1.38mA 22 nC @ 15 V ±30V 645 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
STL18N60M2 STMicroelectronics

STL18N60M2

MOSFET N-CH 600V 9A POWERFLAT HV

STMicroelectronics

1,925 -
Datasheet MDmesh™ II Plus 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 308mOhm @ 4.5A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 791 pF @ 100 V - 57W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (5x6) HV
R6020ENXC7G Rohm Semiconductor

R6020ENXC7G

600V 20A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

950 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) - - Through Hole TO-220FM
IPA60R125CFD7XKSA1 Infineon Technologies

IPA60R125CFD7XKSA1

MOSFET N-CH 600V 11A TO220

Infineon Technologies

729 -
Datasheet OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220 Full Pack
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FETs, MOSFETs FAQ

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