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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
PSMN1R9-40PL127 NXP USA Inc.

PSMN1R9-40PL127

N-CHANNEL POWER MOSFET

NXP USA Inc.

255 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Ta) 4.5V, 10V 1.7mOhm @ 25A, 10V 2.1V @ 1mA 230 nC @ 10 V ±20V 13200 pF @ 25 V - 349W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK9609-55A,118 NXP USA Inc.

BUK9609-55A,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.

8,173 -
Datasheet TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 25A, 10V 2V @ 1mA 60 nC @ 5 V ±15V 4633 pF @ 25 V - 211W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
BUK962R1-40E,118 NXP USA Inc.

BUK962R1-40E,118

MOSFET N-CH 40V 120A D2PAK

NXP USA Inc.

2,536 -
Datasheet TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 1.8mOhm @ 25A, 10V 2.1V @ 1mA 87.8 nC @ 5 V ±10V 13160 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
BUK764R3-40B,118 NXP USA Inc.

BUK764R3-40B,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.

7,959 -
Datasheet TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4824 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
BUK761R8-30C,118 NXP USA Inc.

BUK761R8-30C,118

MOSFET N-CH 30V 100A D2PAK

NXP USA Inc.

9,102 -
Datasheet TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 1.8mOhm @ 25A, 10V 4V @ 1mA 150 nC @ 10 V ±20V 10349 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
NX7002BKMBYL NXP Semiconductors

NX7002BKMBYL

NEXPERIA NX7002B - 60V, N-CHANNE

NXP Semiconductors

55,002 -
Datasheet TrenchMOS™ 3-XFDFN Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 5V, 10V 2.8Ohm @ 200mA, 10V 2.1V @ 250µA 1 nC @ 10 V ±20V 23.6 pF @ 10 V - 350mW (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
PMZ950UPEYL NXP Semiconductors

PMZ950UPEYL

NEXPERIA PMZ950UPE - 20V, P-CHAN

NXP Semiconductors

349,613 -
Datasheet - SC-101, SOT-883 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.4Ohm @ 500mA, 4.5V 950mV @ 250µA 2.1 nC @ 4.5 V ±8V 43 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-883
PMZB600UNEL315 NXP Semiconductors

PMZB600UNEL315

NEXPERIA PMZB600UNE - SMALL SIGN

NXP Semiconductors

150,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
PMZB370UNE,315 NXP Semiconductors

PMZB370UNE,315

NEXPERIA PMZB370UNE - SMALL SIGN

NXP Semiconductors

30,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
PMZ1000UN,315 NXP Semiconductors

PMZ1000UN,315

NEXPERIA PMZ1000UN - SMALL SIGNA

NXP Semiconductors

10,633,200 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs FAQ

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