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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BUK7107-55AIE,118 NXP Semiconductors

BUK7107-55AIE,118

NEXPERIA BUK7107 - N-CHANNEL TRE

NXP Semiconductors

2,400 -
Datasheet TrenchMOS™ TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 50A, 10V 4V @ 1mA 116 nC @ 10 V ±20V 4500 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
PSMN6R3-120PS NXP Semiconductors

PSMN6R3-120PS

PSMN6R3-120PS - N-CHANNEL 120V S

NXP Semiconductors

319 -
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Ta) 10V 6.7mOhm @ 25A, 10V 4V @ 1mA 207.1 nC @ 10 V ±20V 11384 pF @ 60 V - 405W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK95180-100A,127 NXP USA Inc.

BUK95180-100A,127

MOSFET N-CH 100V 11A TO220AB

NXP USA Inc.

9,363 -
Datasheet TrenchMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 4.5V, 10V 173mOhm @ 5A, 10V 2V @ 1mA - ±15V 619 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK9511-55A,127 NXP USA Inc.

BUK9511-55A,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.

1,000 -
Datasheet TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Ta) - 10mOhm @ 25A, 10V 2V @ 1mA - ±10V 4230 pF @ 25 V - 166W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
BUK754R0-40C,127 NXP USA Inc.

BUK754R0-40C,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.

989 -
Datasheet TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) - 4mOhm @ 25A, 10V 4V @ 1mA 97 nC @ 10 V ±20V 5708 pF @ 25 V - 203W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
BUK9516-75B,127 NXP USA Inc.

BUK9516-75B,127

MOSFET N-CH 75V 67A TO220AB

NXP USA Inc.

3,551 -
Datasheet TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 67A (Tc) 4.5V, 10V 14mOhm @ 25A, 10V 2V @ 1mA 35 nC @ 5 V ±15V 4034 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK7611-55B,118 NXP USA Inc.

BUK7611-55B,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.

720 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
PSMN8R5-100ESQ NXP USA Inc.

PSMN8R5-100ESQ

POWER FIELD-EFFECT TRANSISTOR, 1

NXP USA Inc.

676 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
PHP18NQ11T,127 NXP USA Inc.

PHP18NQ11T,127

MOSFET N-CH 110V 18A TO220AB

NXP USA Inc.

663 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
BUK653R4-40C,127 NXP USA Inc.

BUK653R4-40C,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.

4,593 -
Datasheet TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.6mOhm @ 25A, 10V 2.8V @ 1mA 125 nC @ 10 V ±16V 8020 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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