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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
PH2625L,115 NXP USA Inc.

PH2625L,115

MOSFET N-CH 25V 100A LFPAK

NXP USA Inc.

5,684 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
BUK7528-55A,127 NXP USA Inc.

BUK7528-55A,127

PFET, 42A I(D), 55V, 0.028OHM, 1

NXP USA Inc.

4,260 -
Datasheet TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 28mOhm @ 25A, 10V 4V @ 1mA - ±20V 1165 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
PHD97NQ03LT,118 NXP USA Inc.

PHD97NQ03LT,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.

5,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
PHD108NQ03LT,118 NXP USA Inc.

PHD108NQ03LT,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.

8,577 -
Datasheet TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 6mOhm @ 25A, 10V 2V @ 1mA 16.3 nC @ 4.5 V ±20V 1375 pF @ 12 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
PSMN085-150K,518 NXP Semiconductors

PSMN085-150K,518

NEXPERIA PSMN085-150K - 3.5A, 15

NXP Semiconductors

6,398 -
Datasheet TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Tc) 10V 85mOhm @ 3.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 1310 pF @ 25 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
BUK7575-55A,127 NXP Semiconductors

BUK7575-55A,127

NEXPERIA BUK7575 - N-CHANNEL MO

NXP Semiconductors

4,013 -
Datasheet TrenchMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 20.3A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA - ±20V 483 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK7E13-60E,127 NXP USA Inc.

BUK7E13-60E,127

MOSFET N-CH 60V 58A I2PAK

NXP USA Inc.

1,470 -
Datasheet TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) - 13mOhm @ 15A, 10V 4V @ 1mA 22.9 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
BUK9245-55A,118 NXP USA Inc.

BUK9245-55A,118

TRANSISTOR >30MHZ

NXP USA Inc.

1,063 -
Datasheet TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4.5V, 10V 40mOhm @ 5A, 10V 2V @ 1mA 14 nC @ 5 V ±15V 1006 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
PHD71NQ03LT,118 NXP USA Inc.

PHD71NQ03LT,118

TRANSISTOR >30MHZ

NXP USA Inc.

64,782 -
Datasheet TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 10mOhm @ 25A, 10V 2.5V @ 1mA 13.2 nC @ 5 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
BUK9507-30B,127 NXP USA Inc.

BUK9507-30B,127

MOSFET N-CH 30V 75A TO220AB

NXP USA Inc.

6,970 -
Datasheet * - Tube Active - - - - - - - - - - - - - - - - -
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