PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPCC8104,L1Q(CM Toshiba Semiconductor and Storage

TPCC8104,L1Q(CM

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

5,080 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TPCC8105,L1Q(CM Toshiba Semiconductor and Storage

TPCC8105,L1Q(CM

MOSFET P-CH 30V 23A 8TSON

Toshiba Semiconductor and Storage

2,514 -
Datasheet U-MOSVI 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8136.LQ Toshiba Semiconductor and Storage

TPCC8136.LQ

MOSFET P-CH 20V 9.4A 8TSON

Toshiba Semiconductor and Storage

3,328 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.8V, 4.5V 16mOhm @ 9.4A, 4.5V 1.2V @ 1mA 36 nC @ 5 V ±12V 2350 pF @ 10 V - 700mW (Ta), 18W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK40J20D,S1F(O Toshiba Semiconductor and Storage

TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Toshiba Semiconductor and Storage

7,100 -
Datasheet π-MOSVIII TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 44mOhm @ 20A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 100 V - 260W (Tc) 150°C - - Through Hole TO-3P(N)
TPCC8104,L1Q Toshiba Semiconductor and Storage

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

7,515 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK12J60W,S1VE(S Toshiba Semiconductor and Storage

TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

Toshiba Semiconductor and Storage

6,276 -
Datasheet - TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-3P(N)
TPCA8128,L1Q Toshiba Semiconductor and Storage

TPCA8128,L1Q

MOSFET P-CH 30V 34A 8SOP

Toshiba Semiconductor and Storage

6,835 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 4.8mOhm @ 17A, 10V 2V @ 500µA 115 nC @ 10 V +20V, -25V 4800 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C - - Surface Mount 8-SOP Advance (5x5)
STP48N30M8 STMicroelectronics

STP48N30M8

MOSFET N-CH 300V TO220

STMicroelectronics

5,350 -
Datasheet - - Tube Obsolete - - - - - - - - - - - - - - - - -
STD18N65M2-EP STMicroelectronics

STD18N65M2-EP

MOSFET N-CH 650V 11A DPAK

STMicroelectronics

4,242 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 375mOhm @ 5.5A, 10V 4V @ 250µA 14.4 nC @ 10 V ±25V 700 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
HAF1004-90STR-E Renesas Electronics Corporation

HAF1004-90STR-E

MOSFET P-CHANNEL 60V 5A DPAK

Renesas Electronics Corporation

3,162 -
Datasheet - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
FDS4141SN00136P onsemi

FDS4141SN00136P

MOSFET P-CH 40V 10.8A 8SOIC

onsemi

9,085 -
Datasheet PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 10.8A (Ta) 4.5V, 10V 13mOhm @ 10.5A, 10V 3V @ 250µA 49 nC @ 10 V ±20V 2670 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
64-4095PBF Infineon Technologies

64-4095PBF

MOSFET N-CH SMD D2PAK

Infineon Technologies

9,941 -
Datasheet - - Tube Obsolete - - - - - - - - - - - - - - - - -
AUIRF2804L-313 Infineon Technologies

AUIRF2804L-313

MOSFET N-CH 40V 195A TO262

Infineon Technologies

4,448 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
AUIRFSL4010-306 Infineon Technologies

AUIRFSL4010-306

MOSFET N-CH 100V 180A TO262

Infineon Technologies

6,419 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
AUIRFSL4010-313 Infineon Technologies

AUIRFSL4010-313

MOSFET N-CH 100V 180A TO262

Infineon Technologies

8,751 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
PCF6294W onsemi

PCF6294W

IC MOSFET N-CH 30V

onsemi

6,498 -
Datasheet - - Bulk Obsolete - - - 13A (Tj) - - - - - - - - - - - - -
FDC658APG onsemi

FDC658APG

MOSFET P-CH 30V 4A SSOT6

onsemi

4,239 -
Datasheet - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
FDS9435ANBAD008 onsemi

FDS9435ANBAD008

MOSFET P-CH 30V 5.3A 8-SOIC

onsemi

7,701 -
Datasheet - - Tape & Reel (TR) Obsolete - - - 5.3A (Tj) - - - - - - - - - - - - -
FDC637ANNB5E023A onsemi

FDC637ANNB5E023A

MOSFET N-CH 20V 6.2A SSOT-6

onsemi

7,789 -
Datasheet - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
MCAC35N10Y-TP Micro Commercial Co

MCAC35N10Y-TP

MOSFET N-CH 100 35A DFN5060

Micro Commercial Co

5,841 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tj) - 17.1mOhm @ 20A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 1223 pF @ 50 V - 35W -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
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FETs, MOSFETs FAQ

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