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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NP32N055SDE-E1-AZ Renesas

NP32N055SDE-E1-AZ

NP32N055SDE-E1-AZ - MOS FIELD EF

Renesas

3,719 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 32A (Tc) 4.5V, 10V 24mOhm @ 16A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2000 pF @ 25 V - 1.2W (Ta), 66W (Tc) 175°C - - Surface Mount TO-252 (MP-3ZK)
UPA2714GR-E1-A Renesas Electronics Corporation

UPA2714GR-E1-A

P-CHANNEL SWITCHING POWER MOSFET

Renesas Electronics Corporation

5,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
RJK0213DPA-00#J53 Renesas Electronics Corporation

RJK0213DPA-00#J53

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

108,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
RJK03E1DNS-00#J5 Renesas Electronics Corporation

RJK03E1DNS-00#J5

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics Corporation

79,482 -
Datasheet - 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) - 6.9mOhm @ 12.5A, 10V - 10.7 nC @ 4.5 V - 2300 pF @ 10 V - 15W (Tc) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
UPA2810T1L-E2-AY Renesas Electronics Corporation

UPA2810T1L-E2-AY

MOSFET P-CH 30V 13A 8DFN

Renesas Electronics Corporation

75,000 -
Datasheet - 8-VDFN Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 12mOhm @ 13A, 10V 2.5V @ 1mA 40 nC @ 10 V - 1860 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-DFN3333 (3.3x3.3)
UPA2806T1L-E1-AY Renesas Electronics Corporation

UPA2806T1L-E1-AY

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

33,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
UPA2810T1L-E1-AY Renesas Electronics Corporation

UPA2810T1L-E1-AY

MOSFET P-CH 30V 13A 8DFN

Renesas Electronics Corporation

3,000 -
Datasheet - 8-VDFN Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 12mOhm @ 13A, 10V 2.5V @ 1mA 40 nC @ 10 V - 1860 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-DFN3333 (3.3x3.3)
RJJ0315DPA-00#J5A Renesas Electronics Corporation

RJJ0315DPA-00#J5A

MOSFET P-CH 30V 35A

Renesas Electronics Corporation

2,850 -
Datasheet - 8-WDFN Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) - 5.9mOhm @ 17.5A, 10V 2.5V @ 1mA 48 nC @ 4.5 V - 4300 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Surface Mount -
2SK1060-AZ Renesas Electronics Corporation

2SK1060-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,526 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
UPA2720GR-E1-A Renesas Electronics Corporation

UPA2720GR-E1-A

MOSFET N-CH 30V 14A 8PSOP

Renesas Electronics Corporation

2,500 -
Datasheet - 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) - 6.6mOhm @ 7A, 10V 2.5V @ 1mA 27 nC @ 5 V - 2800 pF @ 10 V - - - - - Surface Mount 8-PSOP
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FETs, MOSFETs FAQ

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