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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
2SK2109-T1-AZ Renesas

2SK2109-T1-AZ

2SK2109-T1-AZ - N-CHANNEL MOS FE

Renesas

6,956 -
Datasheet - TO-243AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 4V, 10V 800mOhm @ 300mA, 10V 2V @ 1mA - ±20V 111 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount SC-62
2SK3447TZ-E Renesas

2SK3447TZ-E

2SK3447TZ-E - SILICON N CHANNEL

Renesas

10,000 -
Datasheet - TO-226-3, TO-92-3 Long Body Bulk Obsolete N-Channel MOSFET (Metal Oxide) 150 V 1A (Ta) 4V, 10V 1.95Ohm @ 500mA, 10V 2.5V @ 1mA 4.5 nC @ 10 V ±20V 85 pF @ 10 V - 900mW (Ta) 150°C - - Through Hole TO-92MOD
2SJ356(0)-T1-AY Renesas Electronics Corporation

2SJ356(0)-T1-AY

2SJ356 - SIGNAL DEVICE

Renesas Electronics Corporation

16,300 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
2SK2857-T1-AZ Renesas

2SK2857-T1-AZ

2SK2857-T1-AZ - N-CHANNEL MOSFET

Renesas

14,621 -
Datasheet - TO-243AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 4V, 10V 150mOhm @ 2.5A, 10V 2V @ 1mA 10.6 nC @ 10 V ±20V 265 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount SC-62
UPA1759G-E1-A Renesas

UPA1759G-E1-A

UPA1759 - SWITCHING N-CHANNEL PO

Renesas

5,000 -
Datasheet - 8-PowerSOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4V, 10V 150mOhm @ 2.5A, 10V 2.5V @ 1mA 8 nC @ 10 V ±20V 190 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount 8-PowerSOP
RQA0008RXDQS#H1 Renesas

RQA0008RXDQS#H1

RQA0008 - N-CHANNEL POWER MOSFET

Renesas

2,000 -
Datasheet - TO-243AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16 V 2.4A (Ta) - - 800mV @ 1mA - ±5V 44 pF @ 0 V - 10W (Tc) 150°C - - Surface Mount UPAK
UPA1808GR-9JG-E1-A Renesas

UPA1808GR-9JG-E1-A

UPA1808 - N CHANNEL MOSFET

Renesas

3,000 -
Datasheet - 8-PowerTSSOP (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta) 4V, 10V 17mOhm @ 5A, 10V 2.5V @ 1mA 13 nC @ 10 V ±20V 660 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount 8-Power TSSOP
2SK4150TZ-E Renesas

2SK4150TZ-E

2SK4150TZ - N-CHANNEL POWER MOSF

Renesas

19,000 -
Datasheet - TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 250 V 400mA (Ta) 2.5V, 4V 5.7Ohm @ 200mA, 4V 1.5V @ 1mA 3.7 nC @ 4 V ±10V 80 pF @ 25 V - 750mW (Ta) 150°C - - Through Hole TO-92
2SJ361RYTR-E Renesas Electronics Corporation

2SJ361RYTR-E

POWER FIELD-EFFECT TRANSISTOR, 2

Renesas Electronics Corporation

7,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
HAT1044M-EL-E Renesas

HAT1044M-EL-E

HAT1044M-EL-E - SILICON P CHANNE

Renesas

1,808 -
Datasheet - SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 2.5V @ 1mA 13 nC @ 10 V ±20V 600 pF @ 10 V - 1.05W (Ta) 150°C - - Surface Mount 6-TSOP
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FETs, MOSFETs FAQ

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