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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SCT4062KEHRC11 Rohm Semiconductor

SCT4062KEHRC11

1200V, 26A, 3-PIN THD, TRENCH-ST

Rohm Semiconductor

166 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
SCT3060ALGC11 Rohm Semiconductor

SCT3060ALGC11

SICFET N-CH 650V 39A TO247N

Rohm Semiconductor

462 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W (Tc) 175°C (TJ) - - Through Hole TO-247N
SCT4045DRC15 Rohm Semiconductor

SCT4045DRC15

750V, 45M, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

3,459 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 115W 175°C (TJ) - - Through Hole TO-247-4L
R6047ENZ4C13 Rohm Semiconductor

R6047ENZ4C13

MOSFET N-CH 600V 47A TO247

Rohm Semiconductor

594 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 72mOhm @ 25.8A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 3850 pF @ 25 V - 481W (Tc) 150°C (TJ) - - Through Hole TO-247
SCT4062KEC11 Rohm Semiconductor

SCT4062KEC11

1200V, 62M, 3-PIN THD, TRENCH-ST

Rohm Semiconductor

4,717 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) - - Through Hole TO-247N
SCT4036KW7TL Rohm Semiconductor

SCT4036KW7TL

1200V, 40A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor

413 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tj) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 150W 175°C (TJ) - - Surface Mount TO-263-7L
SCT3080KLHRC11 Rohm Semiconductor

SCT3080KLHRC11

SICFET N-CH 1200V 31A TO247N

Rohm Semiconductor

816 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
SCT4036KEHRC11 Rohm Semiconductor

SCT4036KEHRC11

1200V, 43A, 3-PIN THD, TRENCH-ST

Rohm Semiconductor

368 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
SCT4036KEC11 Rohm Semiconductor

SCT4036KEC11

1200V, 36M, 3-PIN THD, TRENCH-ST

Rohm Semiconductor

4,683 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) - - Through Hole TO-247N
SCT3030KLGC11 Rohm Semiconductor

SCT3030KLGC11

SICFET N-CH 1200V 72A TO247N

Rohm Semiconductor

265 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W (Tc) 175°C (TJ) - - Through Hole TO-247N
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