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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SCT2280KEHRC11 Rohm Semiconductor

SCT2280KEHRC11

1200V, 14A, THD, SILICON-CARBIDE

Rohm Semiconductor

410 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 400 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
R6050JNZ4C13 Rohm Semiconductor

R6050JNZ4C13

MOSFET N-CH 600V 50A TO247G

Rohm Semiconductor

531 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 15V 83mOhm @ 25A, 15V 7V @ 5mA 120 nC @ 15 V ±30V 4500 pF @ 100 V - 615W (Tc) 150°C (TJ) - - Through Hole TO-247G
SCT3080ALHRC11 Rohm Semiconductor

SCT3080ALHRC11

SICFET N-CH 650V 30A TO247N

Rohm Semiconductor

448 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
R6077VNZ4C13 Rohm Semiconductor

R6077VNZ4C13

600V 77A TO-247, PRESTOMOS WITH

Rohm Semiconductor

1,148 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V, 15V 51mOhm @ 23A, 15V 6.5V @ 1.9mA 108 nC @ 10 V ±30V 5200 pF @ 100 V - 781W (Tc) 150°C (TJ) - - Through Hole TO-247
SCT4045DEC11 Rohm Semiconductor

SCT4045DEC11

750V, 45M, 3-PIN THD, TRENCH-STR

Rohm Semiconductor

4,201 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 14600 pF @ 500 V - 115W 175°C (TJ) - - Through Hole TO-247N
R6076ENZ4C13 Rohm Semiconductor

R6076ENZ4C13

MOSFET N-CH 600V 76A TO247

Rohm Semiconductor

463 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 42mOhm @ 44.4A, 10V 4V @ 1mA 260 nC @ 10 V ±20V 6500 pF @ 25 V - 735W (Tc) 150°C (TJ) - - Through Hole TO-247
R6576ENZ4C13 Rohm Semiconductor

R6576ENZ4C13

650V 76A TO-247, LOW-NOISE POWER

Rohm Semiconductor

548 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Ta) 10V 46mOhm @ 44.4A, 10V 4V @ 2.96mA 260 nC @ 10 V ±20V 6500 pF @ 25 V - 735W (Tc) 150°C (TJ) - - Through Hole TO-247
R6576KNZ4C13 Rohm Semiconductor

R6576KNZ4C13

650V 76A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor

300 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 46mOhm @ 44.4A, 10V 5V @ 2.96mA 165 nC @ 10 V ±20V 7400 pF @ 25 V - 735W (Tc) 150°C (TJ) - - Through Hole TO-247G
SCT3080KW7TL Rohm Semiconductor

SCT3080KW7TL

SICFET N-CH 1200V 30A TO263-7

Rohm Semiconductor

785 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) - 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 159W 175°C (TJ) - - Surface Mount TO-263-7
SCT4026DRHRC15 Rohm Semiconductor

SCT4026DRHRC15

750V, 56A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

460 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
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FETs, MOSFETs FAQ

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