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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
S2M0120120D SMC Diode Solutions

S2M0120120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

264 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 150mOhm @ 13.3A, 20V 4V @ 3.3mA 29.6 nC @ 20 V +20V, -5V 652 pF @ 1000 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
S2M0120120K SMC Diode Solutions

S2M0120120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

295 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 150mOhm @ 13.3A, 20V 4V @ 3.3mA 29.6 nC @ 20 V +20V, -5V 652 pF @ 1000 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
S2M0160120J SMC Diode Solutions

S2M0160120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 16A (Tc) 20V 196mOhm @ 10A, 20V 4V @ 2.5mA 26.5 nC @ 20 V +20V, -5V 513 pF @ 1000 V - 122W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
S2M0120120J SMC Diode Solutions

S2M0120120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

327 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 150mOhm @ 13.3A, 20V 4V @ 3.3mA 29.6 nC @ 20 V +20V, -5V 652 pF @ 1000 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
S2M0080120J SMC Diode Solutions

S2M0080120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

230 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tj) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +20V, -5V 1324 pF @ 1000 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
S2M0040120D-1 SMC Diode Solutions

S2M0040120D-1

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

299 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
S3M0040120D SMC Diode Solutions

S3M0040120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300 -
Datasheet - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 65A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
S2M0040120K-1 SMC Diode Solutions

S2M0040120K-1

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
S3M0040120K SMC Diode Solutions

S3M0040120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 65A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +22V, -8V 2844 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
S3M0040120J SMC Diode Solutions

S3M0040120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 76A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

Please provide the target part number, manufacturer, quantity and any required date code, package or delivery requirements so our team can respond more accurately.

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