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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM80N1R2CP ROG Taiwan Semiconductor Corporation

TSM80N1R2CP ROG

MOSFET N-CH 800V 5.5A TO252

Taiwan Semiconductor Corporation

6,253 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60NB099CZ C0G Taiwan Semiconductor Corporation

TSM60NB099CZ C0G

MOSFET N-CHANNEL 600V 38A TO220

Taiwan Semiconductor Corporation

7,073 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.3A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM60NB190CZ Taiwan Semiconductor Corporation

TSM60NB190CZ

600V, 18A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,432 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM80N950CP ROG Taiwan Semiconductor Corporation

TSM80N950CP ROG

MOSFET N-CHANNEL 800V 6A TO252

Taiwan Semiconductor Corporation

2,482 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 691 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60NB260CI Taiwan Semiconductor Corporation

TSM60NB260CI

600V, 13A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

7,565 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 260mOhm @ 3.9A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 1273 pF @ 100 V - 32.1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
TSM60NC196CI Taiwan Semiconductor Corporation

TSM60NC196CI

600V, 20A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

4,336 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 39 nC @ 10 V ±30V 1535 pF @ 300 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
TSM60NB190CM2 Taiwan Semiconductor Corporation

TSM60NB190CM2

600V, 18A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

8,292 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
TSM60NB190CI Taiwan Semiconductor Corporation

TSM60NB190CI

600V, 18A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,884 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 33.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
TSM60N380CP ROG Taiwan Semiconductor Corporation

TSM60N380CP ROG

MOSFET N-CHANNEL 600V 11A TO252

Taiwan Semiconductor Corporation

7,546 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 20.5 nC @ 10 V ±30V 1040 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60NB190CM2 RNG Taiwan Semiconductor Corporation

TSM60NB190CM2 RNG

MOSFET N-CH 600V 18A TO263

Taiwan Semiconductor Corporation

8,767 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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FETs, MOSFETs FAQ

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