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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SI7414DN-T1-GE3 Vishay Siliconix

SI7414DN-T1-GE3

MOSFET N-CH 60V 5.6A PPAK1212-8

Vishay Siliconix

6,579 -
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5.6A (Ta) 4.5V, 10V 25mOhm @ 8.7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SUD50N03-06AP-E3 Vishay Siliconix

SUD50N03-06AP-E3

MOSFET N-CH 30V 90A TO252

Vishay Siliconix

3,067 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V 2.4V @ 250µA 95 nC @ 10 V ±20V 3800 pF @ 15 V - 10W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
SIHP8N50D-E3 Vishay Siliconix

SIHP8N50D-E3

MOSFET N-CH 500V 8.7A TO220AB

Vishay Siliconix

1,000 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFZ34SPBF Vishay Siliconix

IRFZ34SPBF

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix

576 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFD020PBF Vishay Siliconix

IRFD020PBF

MOSFET N-CH 50V 2.4A 4DIP

Vishay Siliconix

5,191 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50 V 2.4A (Tc) 10V 100mOhm @ 1.4A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
SI4463BDY-T1-GE3 Vishay Siliconix

SI4463BDY-T1-GE3

MOSFET P-CH 20V 9.8A 8SO

Vishay Siliconix

4,957 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.8A (Ta) 2.5V, 10V 11mOhm @ 13.7A, 10V 1.4V @ 250µA 56 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SQD100N04-3M6L_GE3 Vishay Siliconix

SQD100N04-3M6L_GE3

MOSFET N-CH 40V 100A TO252AA

Vishay Siliconix

3,275 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.6mOhm @ 20A, 10V 3.5V @ 250µA 105 nC @ 10 V ±20V 6700 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
IRFI520GPBF Vishay Siliconix

IRFI520GPBF

MOSFET N-CH 100V 7.2A TO220-3

Vishay Siliconix

919 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Tc) 10V 270mOhm @ 4.3A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRLZ24LPBF Vishay Siliconix

IRLZ24LPBF

MOSFET N-CH 60V 17A TO262-3

Vishay Siliconix

871 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262-3
IRFD9020PBF Vishay Siliconix

IRFD9020PBF

MOSFET P-CH 60V 1.6A 4DIP

Vishay Siliconix

1,250 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 280mOhm @ 960mA, 10V 4V @ 1µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
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FETs, MOSFETs FAQ

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