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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHA22N60EL-GE3 Vishay Siliconix

SIHA22N60EL-GE3

N-CHANNEL600V

Vishay Siliconix

995 -
Datasheet - TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IRFPC50APBF Vishay Siliconix

IRFPC50APBF

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix

4,196 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 580mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 2100 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFPE40PBF Vishay Siliconix

IRFPE40PBF

MOSFET N-CH 800V 5.4A TO247-3

Vishay Siliconix

160 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 2Ohm @ 3.2A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHK185N60E-T1-GE3 Vishay Siliconix

SIHK185N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix

2,048 -
Datasheet E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 185mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
IRFPF40PBF Vishay Siliconix

IRFPF40PBF

MOSFET N-CH 900V 4.7A TO247-3

Vishay Siliconix

296 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4.7A (Tc) 10V 2.5Ohm @ 2.8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHG16N50C-E3 Vishay Siliconix

SIHG16N50C-E3

MOSFET N-CH 500V 16A TO247AC

Vishay Siliconix

462 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHP12N50C-E3 Vishay Siliconix

SIHP12N50C-E3

MOSFET N-CH 500V 12A TO220AB

Vishay Siliconix

1,000 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 555mOhm @ 4A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 1375 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole -
SIHA21N65EF-GE3 Vishay Siliconix

SIHA21N65EF-GE3

N-CHANNEL 650V

Vishay Siliconix

1,000 -
Datasheet - TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±30V 2322 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHB22N65E-T1-GE3 Vishay Siliconix

SIHB22N65E-T1-GE3

N-CHANNEL 650V

Vishay Siliconix

752 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2415 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFB18N50KPBF Vishay Siliconix

IRFB18N50KPBF

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix

878 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 2830 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FETs, MOSFETs FAQ

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