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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SI7463DP-T1-GE3 Vishay Siliconix

SI7463DP-T1-GE3

MOSFET P-CH 40V 11A PPAK SO-8

Vishay Siliconix

9,772 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 40 V 11A (Ta) 4.5V, 10V 9.2mOhm @ 18.6A, 10V 3V @ 250µA 140 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRFB9N60APBF Vishay Siliconix

IRFB9N60APBF

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix

5,840 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIR836DP-T1-GE3 Vishay Siliconix

SIR836DP-T1-GE3

MOSFET N-CH 40V 21A PPAK SO-8

Vishay Siliconix

8,425 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Tc) 4.5V, 10V 19mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 600 pF @ 20 V - 3.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SISA72DN-T1-GE3 Vishay Siliconix

SISA72DN-T1-GE3

MOSFET N-CH 40V 60A PPAK1212-8

Vishay Siliconix

7,101 -
Datasheet TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 10A, 10V 2.4V @ 250µA 30 nC @ 4.5 V +20V, -16V 3240 pF @ 20 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SIS488DN-T1-GE3 Vishay Siliconix

SIS488DN-T1-GE3

MOSFET N-CH 40V 40A PPAK1212-8

Vishay Siliconix

9,682 -
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.2V @ 250µA 32 nC @ 10 V ±20V 1330 pF @ 20 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SIHA5N80AE-GE3 Vishay Siliconix

SIHA5N80AE-GE3

E SERIES POWER MOSFET THIN-LEAD

Vishay Siliconix

2,322 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SI7106DN-T1-GE3 Vishay Siliconix

SI7106DN-T1-GE3

MOSFET N-CH 20V 12.5A PPAK1212-8

Vishay Siliconix

6,321 -
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) 2.5V, 4.5V 6.2mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SIHD6N65E-GE3 Vishay Siliconix

SIHD6N65E-GE3

MOSFET N-CH 650V 7A DPAK

Vishay Siliconix

2,977 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IRLIZ14GPBF Vishay Siliconix

IRLIZ14GPBF

MOSFET N-CH 60V 8A TO220-3

Vishay Siliconix

9,017 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4V, 5V 200mOhm @ 4.8A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFS11N50APBF Vishay Siliconix

IRFS11N50APBF

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix

3,156 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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FETs, MOSFETs FAQ

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