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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHG125N65E-GE3 Vishay Siliconix

SIHG125N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

3,526 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHK100N65E-T1-GE3 Vishay Siliconix

SIHK100N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

6,498 -
Datasheet E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
SIHP100N65E-GE3 Vishay Siliconix

SIHP100N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

8,627 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB100N65E-GE3 Vishay Siliconix

SIHB100N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

2,191 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHH100N65E-T1-GE3 Vishay Siliconix

SIHH100N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

6,404 -
Datasheet E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
MXP120A080FL-GE3 Vishay Siliconix

MXP120A080FL-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

5,041 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
MXP120A045FW-GE3 Vishay Siliconix

MXP120A045FW-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

3,025 -
Datasheet MaxSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 49A (Tc) 18V, 20V 56mOhm @ 20A, 20V 2.38V @ 5mA 75.6 nC @ 18 V +22V, -10V 1958 pF @ 800 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3L
MXP120A045FL-GE3 Vishay Siliconix

MXP120A045FL-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

8,452 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
SIS822DNT-T1-GE3 Vishay Siliconix

SIS822DNT-T1-GE3

MOSFET N-CH 30V 12A PPAK1212-8

Vishay Siliconix

4,667 -
Datasheet - PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 24mOhm @ 7.8A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 435 pF @ 15 V - 15.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SI2302ADS-T1-GE3 Vishay Siliconix

SI2302ADS-T1-GE3

MOSFET N-CH 20V 2.1A SOT23-3

Vishay Siliconix

7,360 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.1A (Ta) 2.5V, 4.5V 60mOhm @ 3.6A, 4.5V 1.2V @ 50µA 10 nC @ 4.5 V ±8V 300 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
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