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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHA4N80E-GE3 Vishay Siliconix

SIHA4N80E-GE3

MOSFET N-CH 800V 4.3A TO220

Vishay Siliconix

2,911 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHFS11N50A-GE3 Vishay Siliconix

SIHFS11N50A-GE3

MOSFET N-CH 500V 11A TO263

Vishay Siliconix

9,876 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHB12N60ET1-GE3 Vishay Siliconix

SIHB12N60ET1-GE3

MOSFET N-CH 600V 12A TO263

Vishay Siliconix

5,047 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHB12N60ET5-GE3 Vishay Siliconix

SIHB12N60ET5-GE3

MOSFET N-CH 600V 12A TO263

Vishay Siliconix

5,286 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHF7N60E-GE3 Vishay Siliconix

SIHF7N60E-GE3

MOSFET N-CHANNEL 600V 7A TO220

Vishay Siliconix

9,293 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHFS9N60A-GE3 Vishay Siliconix

SIHFS9N60A-GE3

MOSFET N-CH 600V 9.2A TO263

Vishay Siliconix

4,606 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRL3202L Vishay Siliconix

IRL3202L

MOSFET N-CH 20V 48A TO262-3

Vishay Siliconix

8,151 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20 V 48A (Tc) 4.5V, 7V 16mOhm @ 29A, 7V 700mV @ 250µA (Min) 43 nC @ 4.5 V ±10V 2000 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262-3
IRL520L Vishay Siliconix

IRL520L

MOSFET N-CH 100V 9.2A TO262-3

Vishay Siliconix

9,386 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262-3
IRFZ34L Vishay Siliconix

IRFZ34L

MOSFET N-CH 60V 30A TO262-3

Vishay Siliconix

6,023 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262-3
SIHP6N65E-GE3 Vishay Siliconix

SIHP6N65E-GE3

MOSFET N-CH 650V 7A TO220AB

Vishay Siliconix

3,741 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FETs, MOSFETs FAQ

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