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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SUP53P06-20-GE3 Vishay Siliconix

SUP53P06-20-GE3

MOSFET P-CH 60V 9.2A/53A TO220AB

Vishay Siliconix

5,152 -
Datasheet TrenchFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 9.2A (Ta), 53A (Tc) 4.5V, 10V 19.5mOhm @ 30A, 10V 3V @ 250µA 115 nC @ 10 V ±20V 3500 pF @ 25 V - 3.1W (Ta), 104.2W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRLZ14L Vishay Siliconix

IRLZ14L

MOSFET N-CH 60V 10A TO262-3

Vishay Siliconix

6,801 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262-3
SIHB6N80E-GE3 Vishay Siliconix

SIHB6N80E-GE3

MOSFET N-CH 800V 5.4A D2PAK

Vishay Siliconix

2,041 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFD210 Vishay Siliconix

IRFD210

MOSFET N-CH 200V 600MA 4DIP

Vishay Siliconix

3,859 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 600mA (Ta) 10V 1.5Ohm @ 360mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
IRFR110 Vishay Siliconix

IRFR110

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

3,706 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR210TR Vishay Siliconix

IRFR210TR

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

4,953 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFD010 Vishay Siliconix

IRFD010

MOSFET N-CH 50V 1.7A 4DIP

Vishay Siliconix

3,649 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 50 V 1.7A (Tc) 10V 200mOhm @ 860mA, 10V 4V @ 250µA 13 nC @ 10 V ±20V 250 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
IRFD014 Vishay Siliconix

IRFD014

MOSFET N-CH 60V 1.7A 4DIP

Vishay Siliconix

9,386 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.7A (Ta) 10V 200mOhm @ 1A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 310 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
IRFD9014 Vishay Siliconix

IRFD9014

MOSFET P-CH 60V 1.1A 4DIP

Vishay Siliconix

9,981 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 10V 500mOhm @ 660mA, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
IRFR110TR Vishay Siliconix

IRFR110TR

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

3,750 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
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FETs, MOSFETs FAQ

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