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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SQD97N06-6M3L_GE3 Vishay Siliconix

SQD97N06-6M3L_GE3

MOSFET N-CH 60V 97A TO252AA

Vishay Siliconix

3,152 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 97A (Tc) 4.5V, 10V 6.3mOhm @ 25A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 6060 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
SQD50034EL_GE3 Vishay Siliconix

SQD50034EL_GE3

MOSFET N-CH 60V 100A TO252AA

Vishay Siliconix

1,059 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.5V @ 250µA 90 nC @ 10 V ±20V 6100 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
SIR876ADP-T1-GE3 Vishay Siliconix

SIR876ADP-T1-GE3

MOSFET N-CH 100V 40A PPAK SO-8

Vishay Siliconix

5,452 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.8V @ 250µA 49 nC @ 10 V ±20V 1630 pF @ 50 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SI7633DP-T1-GE3 Vishay Siliconix

SI7633DP-T1-GE3

MOSFET P-CH 20V 60A PPAK SO-8

Vishay Siliconix

3,208 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 3.3mOhm @ 20A, 10V 3V @ 250µA 260 nC @ 10 V ±20V 9500 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRFU9210PBF Vishay Siliconix

IRFU9210PBF

MOSFET P-CH 200V 1.9A TO251AA

Vishay Siliconix

2,681 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
IRFR020TRPBF Vishay Siliconix

IRFR020TRPBF

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix

4,476 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRF630STRLPBF Vishay Siliconix

IRF630STRLPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix

1,233 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF630SPBF Vishay Siliconix

IRF630SPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix

944 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI4114DY-T1-E3 Vishay Siliconix

SI4114DY-T1-E3

MOSFET N-CH 20V 20A 8SO

Vishay Siliconix

10,990 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V 2.1V @ 250µA 95 nC @ 10 V ±16V 3700 pF @ 10 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SISS5710DN-T1-GE3 Vishay Siliconix

SISS5710DN-T1-GE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix

5,707 -
Datasheet TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 7.2A (Ta), 26.2A (Tc) 7.5V, 10V 31.5mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 770 pF @ 75 V - 4.1W (Ta), 54.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
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