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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRL510S Vishay Siliconix

IRL510S

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix

7,313 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFZ10 Vishay Siliconix

IRFZ10

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix

4,304 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFD310 Vishay Siliconix

IRFD310

MOSFET N-CH 400V 350MA 4DIP

Vishay Siliconix

8,932 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
SI3424DV-T1-E3 Vishay Siliconix

SI3424DV-T1-E3

MOSFET N-CH 30V 5A 6-TSOP

Vishay Siliconix

8,744 -
Datasheet - SOT-23-6 Thin, TSOT-23-6 Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) - 28mOhm @ 6.7A, 10V 800mV @ 250µA (Min) 18 nC @ 10 V - - - - - - - Surface Mount 6-TSOP
SI4396DY-T1-E3 Vishay Siliconix

SI4396DY-T1-E3

MOSFET N-CH 30V 16A 8SO

Vishay Siliconix

8,965 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 11.5mOhm @ 10A, 10V 2.6V @ 250µA 45 nC @ 10 V ±20V 1675 pF @ 15 V - 3.1W (Ta), 5.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SI6463BDQ-T1-E3 Vishay Siliconix

SI6463BDQ-T1-E3

MOSFET P-CH 20V 6.2A 8-TSSOP

Vishay Siliconix

8,596 -
Datasheet TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Cut Tape (CT) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.2A (Ta) - 15mOhm @ 7.4A, 4.5V 800mV @ 250µA 60 nC @ 5 V - - - - - - - Surface Mount 8-TSSOP
SI4838DY-T1-GE3 Vishay Siliconix

SI4838DY-T1-GE3

MOSFET N-CH 12V 17A 8SO

Vishay Siliconix

2,883 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 17A (Ta) 2.5V, 4.5V 3mOhm @ 25A, 4.5V 600mV @ 250µA (Min) 60 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRF630S Vishay Siliconix

IRF630S

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix

2,235 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRCZ44PBF Vishay Siliconix

IRCZ44PBF

MOSFET N-CH 60V 50A TO220-5

Vishay Siliconix

4,241 -
Datasheet HEXFET® TO-220-5 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V Current Sensing 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-5
IRF840LCSTRRPBF Vishay Siliconix

IRF840LCSTRRPBF

MOSFET N-CH 500V 8A TO263AB

Vishay Siliconix

6,560 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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FETs, MOSFETs FAQ

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